Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.

Autorentext

Zhaojun Liu, Ph.D., is currently an assistant professor with Sun Yat-sen University-Carnegie Mellon University Joint Institute of Engineering (JIE) and Shunde International Joint Research Institute (JRI). He received the B.Eng. degree in Electrical Engineering and Automation from the Hebei University of Technology in 2003, the M.Phil. degree in Physical Electronics from Nankai University in 2007, and the Ph.D. degree in Electronic and Computer Engineering (ECE) from the Hong Kong University of Science and Technology (HKUST) in 2011. He was a research assistant with the State Key Laboratory on Advanced Displays and Optoelectronics Technologies (PSKL) at HKUST in Oct. 2006-Apr. 2007. He was a postdoctoral fellow with the Photonics Technology Center (PTC) at HKUST in Jan. 2011-July 2013. He was a visiting assistant professor with the ECE department at HKUST in Aug. 2013-Sept. 2014. He is an adjunct assistant professor with ECE department at HKUST since Sept. 2014 and a visiting professorwith ECE department at Carnegie Mellon University since Dec. 2015. Dr. Liu is the core member of the "Pearl River Talent Plan" 5th Innovation Team of Guangdong Province. Tongde Huang received his B.S. degree from Jilin University, Changchun in 2006, and M.S. degree from Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai in 2009. His Ph.D. degree was obtained at the Hong Kong University of Science and Technology in 2013. He joined the Microwave Electronic Laboratory in Chalmers University of Technology as a post-doc researcher from 2014. His research focuses on device design, modeling, and in-house MMIC. Current efforts include designing high-linearity GaN power amplifier, noise measurement, and modeling. Qiang Li, Ph.D., is currently a research assistant professor with the Department of Electronic and Computer Engineering at the Hong Kong University of Science and Technology (HKUST). He received his B.S. degree in Microelectronics from Peking University, Beijing, China in 2009 and a Ph.D. in Electronic and Computer Engineering from HKUST in 2014. His research focuses on compound semiconductor materials and devices. Xing Lu, Ph.D., is currently an Assistant Professor with the State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, China. He received a B.S. degree in Microelectronics from Fudan University, Shanghai, China in 2010, and a Ph.D. degree in Electronic and Computer Engineering from the Hong Kong University of Science and Technology, Hong Kong in 2014. His research focuses on design and implementation of compound semiconductor devices. Xinbo Zou, Ph.D., is currently a research assistant professor with Department of Electronic and Computer Engineering and also a Junior Fellow with Institute for Advanced Study (IAS), HKUST. He received his B.Eng. degree in Electronic Science and Technology from Beijing University of Posts and Telecommunications (BUPT) in 2007 and his Ph.D.from the Hong Kong University of Science and Technology (HKUST) in 2013 for developing high performance green and yellow LEDs on Si substrates. His research interests focused on (1) development and characterization of novel GaN-based nanostructures grown on Si; and (2) MOCVD growth and fabrication of GaN-based devices.

Inhalt
Introduction.- GaN-based HEMTs and MOSHEMTs.- III-V Materials and Devices.- Summary.- References.- Authors' Biographies .