This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.

Autorentext

Tanya Kirilova Gachovska received a M.Eng. degree in electrical engineering specializing in Automation of Production and a Ph.D. in electrical engineering specializing in Pulsed Electric Fields(PEF) from the University of Ruse, Bulgaria, in 1995 and 2003, respectively. She worked as an assistant professor from 1999-2003 at the University of Ruse. She conducted research for two years and taught for a semester at McGill University in Montreal, Canada. She had an 18 months post-doc experience on PEF at the University of Nebraska Lincoln, USA. Tanya finished her second Ph.D. in electrical engineering specializing in Power Electronics specifically Modeling of Power Semiconductor Devices in 2012. During her studies, she has taught different courses and labs and continued a collaboration for PEF research with the University of Ruse, McGill, UNL, and two Algerians universities. She is currently at Solantro Semiconductor Inc. She is the author or co-author of more than 30 technical papers and conference presentations, and holds a world patent in PEF. Professor Hudgins is a native of West Texas. He attended Texas Tech University, in Lubbock, Texas, where he received a Ph.D. degree in electrical engineering in 1985. Dr. Hudgins served as Associate and Interim Department Chair of Electrical and Computer Engineering at the University of South Carolina prior to joining the University of Nebraska as Chair of the Electrical Engineering Department. Currently, he is Director of the Nebraska Wind Applications Center and Associate Director of the Nebraska Center for Energy Sciences Research. His research involves power electronic device characterization and modeling, power electronics design, and renewable energy systems. In 2000, he was named as an IEEE Third Millenium Medal recipient for "Outstanding Contributions in the area of Power Electronics." Dr. Hudgins is a Fellow of the IEEE and a member of the IEEE Board of Directors (Division II Director). Dr.Hudgins servedas the Presidentof the IEEE Power Electronics Society (PELS) for the years of 1997 and 1998 and as President of the IEEE Industry Applications Society (IAS) in 2003. Dr. Hudgins has published over 130 technical papers and book chapters concerning power semiconductors, power electronics, renewable energy systems, and engineering education. He has worked with numerous power semiconductor and equipment manufacturing companies. Enrico Santi received a bachelor's degree in electrical engineering from the University of Padua, Padua, Italy, in 1988, and a Ph.D. degree from the California Institute of Technology (Caltech) in 1994. Since 1998, he has been with the Department of Electrical Engineering of the University of South Carolina, where he is currently an Associate Professor. He has published over 100 papers on power electronics and modeling and simulation in international journals and conference proceedings. His research interests include switched-mode power converters, advanced modeling and simulationof power systems, modeling and simulation of semiconductor power devices, and control of power electronic systems. Dr. Santi was the recipient of the National Science Foundation CAREER Award in 2004 and the IEEE Industry Applications Society William M. Portnoy Paper Award in 2003, 2005, and 2006.

Inhalt
Introduction to Power Semiconductor Device Modeling.- Physics of Power Semiconductor Devices.- Modeling of a Power Diode and IGBT.- IGBT Under an Inductive Load-Switching Condition in Simulink.- Parameter Extraction.