This book covers a wide range of topics on work function and band alignment, from the basics to practical examples. Work function and band alignment determine electric properties at the interface including surfaces, such as electron emission, the Schottky barrier height, and ohmic contact. Basic physics is used to systematically explain how to adjust and measure work function and how to modify the band alignment required for controlling work function in functional materials and electrodes. Methods introduced in the book help to improve device performance and to solve the problems of controlling the voltage and efficiency of devices in a great variety of applications, including electronic devices, optical devices such as displays, and energy devices such as solar cells and batteries. Understanding the technical methods necessary for controlling work function and band alignment can help to solve problems such as non-ohmic contact at sourceelectrode or drainelectrode interfaces in metaloxidesilicon structures, which directly contributes to improving power saving and reducing heat generation in computers.

Describes the factors that determine work function values from the physics point of view Provides ways of controlling work function systematically Presents systematic methods of modifying band alignment

Autorentext

Dr. Michiko Yoshitake has worked on surfaces and thin films using ultrahigh vacuum instruments for more than 30 years. Her main focus has been the establishment of various prediction methods of either phenomena or material properties rather than the development of materials. She also has long experience in surface analysis, especially in X-ray photoelectron spectroscopy.

Inhalt
Introduction: Functions and Performances Governed by Work Fucntion.- What Is Work Function?: Definition and Determination of Factors of Work Function.- Modification of Work Function.- Measurement of Work Function.- Modification of Band Alignment via Work Function Control.- An Advanced Model for Practical Devices.- Utilizing Interface Potential.- Appendix.