GaN Power Devices for Efficient Power Conversion

Autorentext

Alex Lidow is the CEO and Co-founder of Efficient Power Conversion. Michael de Rooij is Vice President of Applications Engineering at Efficient Power Conversion. John Glaser is Director of Applications at Efficient Power Conversion. Alejandro Pozo is a Senior Applications Engineer at Efficient Power Conversion. Shengke Zhang is Vice President of Product Reliability at Efficient Power Conversion. Marco Palma is a Senior FAE Manager based in Europe. David Reusch is a Systems Engineer, Kilby Labs, Texas Instruments, USA. Johan Strydom is Advanced Development Manager, Kilby Labs, Texas Instruments, USA.

Klappentext

An up-to-date and concise review of GaN transistor design and applications In the newly revised fourth edition of GaN Power Devices for Efficient Power Conversion, a team of distinguished researchers and practicing engineers deliver a concise and effective new guide to designing small, energy-efficient, and inexpensive products with GaN transistors. This new edition covers all relevant new GaN technology advancements, allowing students and practicing engineers to get, and stay ahead of, the curve with GaN device and circuit technology. You'll explore applications including DC to DC converters, solar inverters, motor drive controllers, satellite electronics, and LiDAR devices. The 4th edition offers critical updates for space applications, vertical GaN, and driving transistors and integrated circuits. New chapters on reliability testing advancements, device wear out mechanisms, thermal management, and the latest developments in monolithic integration round out the book. Readers will also find:

• The latest updates on significant technology improvements, like integrated circuits, reliability studies, and new applications
• Comprehensive explorations of integrated circuit construction, characteristics, reliability results, and applications
• Practical discussions of specific circuit designs, layout, and thermal dissipation when designing power conversion systems

• Chapters written by practicing expert leaders in the power semiconductor field and industry pioneers Perfect for practicing power conversion engineers, GaN Power Devices for Efficient Power Conversion will also benefit electrical engineering students and device scientists in the field of power electronics.

  Inhalt

  Foreword xi

  Acknowledgments xiii

  1 GaN Technology Overview 1

  1.1 Silicon Power MOSFETs: 1976-2010 1

  1.2 The GaN Journey Begins 2

  1.3 GaN and SiC Compared with Silicon 2

  1.4 The Basic GaN Transistor Structure 6

  1.5 Building a GaN HEMT Transistor 11

  1.6 GaN Integrated Circuits 15

  1.7 Summary 21

  References 22

  2 GaN Transistor Electrical Characteristics 25

  2.1 Introduction 25

  2.2 Device Ratings 25

  2.3 Gate Voltage 30

  2.4 On-Resistance (R DS(on)) 31

  2.5 Threshold Voltage 34

  2.6 Capacitance and Charge 35

  2.7 Reverse Conduction 38

  2.8 Thermal Characteristics 40

  2.9 Summary 42

  References 42

  3 Driving GaN Transistors 45

  3.1 Introduction 45

  3.2 Gate Drive Voltage 47

  3.3 Gate Drive Resistance 48

  3.4 dv/dt Considerations 50

  3.5 di/dt Considerations 53

  3.6 Bootstrapping and Floating Supplies 56

  3.7 Transient Immunity 59

  3.8 Gate Drivers and Controllers for Enhancement-Mode GaN Transistors 61

  3.9 Cascode, Direct Drive, and Higher-Voltage Configurations 61

  3.10 Using GaN Transistors with Drivers or Controllers Designed for Si MOSFETs 67

  3.11 Driving GaN ICs 68

  3.12 Summary 69

  References 70

  4 Layout Considerations for GaN Transistor Circuits 75

  4.1 Introduction 75

  4.2 Origin of Parasitic Inductance 76

  4.3 Minimizing Common-Source Inductance 77

  4.4 Minimizing Power-Loop Inductance in a Half-Bridge Configuration 79

  4.5 Paralleling GaN Transistors 85

  4.6 Summary 93

  References 93

  5 GaN Reliability 95

  5.1 Introduction 95

  5.2 Getting Started with GaN Reliability 95

  5.3 Determining Wear-Out Mechanisms Using Test-to-Fail Methodology 95

  5.4 Using Test-to-Fail Results to Predict Device Lifetime in a System 98

  5.5 Wear-Out Mechanisms 99

  5.6 Mission-Specific Reliability Predictions 133

  5.7 Summary 150

  References 150

  6 Thermal Management of GaN Devices 155

  6.1 Introduction 155

  6.2 Thermal Equivalent Circuits 155

  6.3 Cooling Methods 160

  6.4 System-Level Thermal Overview: Single FET 163

  6.5 System-Level Thermal Analysis: Multiple FETs 176

  6.6 Experimental Thermal Examples 182

  6.7 Summary 191

  References 191

  7 Hard-Switching Topologies 195

  7.1 Introduction 195

  7.2 Hard-Switching Loss Analysis 196

  7.3 External Factors Impacting Hard-Switching Losses 217

  7.4 Frequency Impact on Magnetics 223

  7.5 Buck Converter Example 224

  7.6 Summary 245

  References 245

  8 Resonant and Soft-Switching Converters 249

  8.1 Introduction 249

  8.2 Resonant and Soft-Switching Techniques 249

  8.3 Key Device Parameters for Resonant and Soft-Switching Applications 254

  8.4 High-Frequency Resonant Bus Converter Example 261

  8.5 Summary 269

  References 271

  9 RF Performance 273

  9.1 Introduction 273

  9.2 Differences Between RF and Switching Transistors 275

  9.3 RF Basics 276

  9.4 RF Transistor Metrics 277

  9.5 Amplifier Design Using Small-Signal s-Parameters 284

  9.6 Amplifier Design Example 285

  9.7 Summary 292

  References 292

  10 DC-DC Power Conversion 295

  10.1 Introduction 295

  10.2 DC-DC Converter Examples 295

  10.3 Summary 317

  References 318

  11 Multilevel Converters 321

  11.1 Introduction 321

  11.2 Benefits of Multilevel Converters 321

  11.3 Experimental Examples 338

  11.4 Summary 348

  References 348

  12 Class D Audio Amplifiers 351

  12.1 Introduction 351

  12.2 GaN Transistor Class D Audio Amplifier Example 355

  12.3 Summary 364

  References 364

  13 High Current Nanosecond Laser Drivers for Lidar 367

  13.1 Introduction to Light Detection and Ranging (Lidar) 367

  13.2 Pulsed Laser Driver Overview 368

  13.3 Basic Design Process 378

  13.4 Hardware Driver Design 384

  13.5 Experimental Results 388

  13.6 Additional Considerations for Laser Transmitter Design 394

  13.7 Summary 399

  References 399

  14 Motor Drives 403

  14.1 Introduction 403

  14.2 Motor Types 403

  14.3 Inverter 403

  14.4 Typical Applications 404

  14.5 Voltage Source Inverters and Motor Control Basics 404

  14.6 Field-Oriented Control Basics 408

  14.7 Current Measurement Techniques 410

  14.8 Power Dissipation in Motor and Inverter 411

  14.9 Silicon Inverter Limitations 412

  14.10 LC Filter Dissipation 412

  14.11 Torque Sixth Harmonic Dissipation 413

  14.12 GaN Advantage 413

  14.13 GaN Switching Behavior 413

  14.14 Dead Time Elimination Effect 414

  14.15 PWM Frequency Increase Effect 415

  14.16 Layout Considerations for Motor Drives 420

  14.17 GaN Devices for Motor Applications 421

  14.18 Application Examples 421

  14.19 Summary 430

  References 430

  15 GaN Transistors and Integrated Circuits for Space Applications 433

  15.1 Introduction 433

  15.2 Failure Mechanisms in Electronic Components Used in Space Applications 433

  15.3 Standards for Radiation Exposure and Tolerance 434

  15.4 Gamma Radiation 434

  15.5 Neutron Radiation (Displacement Damage) 437

  15.6 Single-Event Effects (SEE) Testing 438

  15.7 Performance Comparison Between GaN Transistors and Rad-Hard Si MOSFETs 440

  15.8 GaN Integrated Circuits 441

  15.9 Summary 445

  References 445

  16 Replacing Silicon Power MOSFETs 449

  16.1 Introduction: GaN, Rapid Growth/Great Future 449

  16.2 New Capabilities Enabled by GaN Devices 449

  16.3 GaN Devices Are Easy to Use 453

  16.4 GaN Cost Reduction over Time 454

  16.5 GaN Devices Are Reliable 454

  16.6 Future Direction of GaN Devices 455

  16.7 Summary 456

  References 456

  Appendix Glossary of Terms 459

  Index 477