Based on the author's many years of research, this book expands and complements the latest research results in this field. It introduces in detail the basic principle, growth technology, development status and application trend of GaN single crystal material growth. The author team adopts an open and learning attitude and discusses the future development of GaN material growth and device applications with colleagues in the field. It is hoped that the publication of this book can present the frontier development status and prospect of GaN material growth and application to personnel in related fields, hoping to make readers more thoughtful and generate positive innovation points.

Introduces latest research progress and achievements of gallium nitride materials and typical applications Based on detailed data, systematic and thorough explanation of professional knowledge Provides open discussions on the future and development trend of gallium nitride materials

Autorentext

Prof. Ke Xu has been engaged in the growth and equipment research of Nitride semiconductor materials for a long time. He has systematically studied the growth of Gallium Nitride materials. He has successfully developed high quality complete 2-inch single crystal gallium nitride substrate and achieved industrial preparationand the key technology of 6-inch GaN single crystal has been broken through in recent years. Published more than 130 papers, applied for more than 100 patents, and made more than 20 invited presentations at international conferences. He is a co-chair of the International Conference of Nitride Semiconductor (ICNS) to be held in Fukuda, Japan in 2023, which is themost important international conference on wide bandgap semiconductors.

Prof. Jianfeng Wang has been engaged in the preparation and industrial development of GaN single crystal substrates. We conducted in-depth research on the HVPE growth mechanism and defect evolution mechanism of GaN, and used intermediate layer methods such as periodic masks and GaN nanowire arrays to obtain crack free and high-quality GaN materials. In recent years, He has further achieved the engineering preparation of 4-inch GaN single crystal substrates. Applied for more than 20 patents and gave 5 invited presentations at important international conferences such as ICNS and APWS.

Prof. Guoqiang Ren achieved the growth of 2-inch gallium nitride single crystal with centimeter level thickness earlier internationally;Pioneered the development of gallium nitride Ammonothermal growth in China, achieving important breakthroughs in ammonia thermal growth equipment and growth technology, and reducing dislocation density to the order of 10^3/ cm^-2. .His main research focus is on the growth and characterization of gallium nitride single crystals. Applied for over 40 articles. I have presented more than 20 reports at international and domestic conferences, such as CGCT, IFWS, the National Crystal Growth Conference and so on.

Dr. Zongliang Liu has been engaged in the preparation of Gallium nitride, equipment development for more than ten years. He has systematically studied the nitrogen source dissolution-transport-crystallization mechanism of the Na flux growth system, as well as the physical properties of liquid-phase GaN single crystals. He has completed the development of large-size flux method single crystal preparation technology and used the independent intellectual property of the flux method (Na Flux method) high-temperature and high-pressure growth equipment to obtain high-quality 2-inch 2mm gallium nitride bulk single crystals. Applied for over 60 patents and presented 15 reports at international and domestic conferences such as ICGE, ICNS, IWN, etc. on nitride semiconductors.

Inhalt

Basic Characteristics of GaN Monocrystals.- Basic Characteristics of Gallium Nitride Single Crystal Materials.- Hydride Vapor Phase Epitaxy Method.- Ammonothermal method.- Na-flux method.- Homogeneous Epitaxial Growth Technology of Gallium Nitride Single Crystals.- Progress in Optoelectronic Device Applications.- Applications of Freestanding Gallium Nitride Sbustrates- in Power Electronic and Microwave RF Devices.