Provides analytical models for lateral electric field and length of velocity saturation region of graphene nanoribbon based field effect transistors (GNR-based FETs)
Discusses an analytical model for the ionization coefficient and breakdown voltage of GNR-based FETs
Presents simulations for GNR-based FETs in terms of breakdown voltage and calculates the maximum operating voltage of the typical GNRFETs at different conditions

Autorentext

Mahdiar Ghadiry is a postdoctorate in electronics at the University of Malaya (UM), received his PhD in microelectronics, and has more than six years of experience at the university including managing, lecturing, and supervising master's and degree-level students. He has an extensive research background and has published more than 30 ISI journal articles and 3 books. In addition, he has been involved in the electronics industry for three years, and has more than four years of experience in integrated circuit (IC) design and embedded system design as an employee of the Electronic Components Industries (ECI), which is the biggest IC design company in Iran. Dr. Iraj Sadegh Amiri received his B.Sc (Applied Physics) degree from the Public University of Urmia, Iran in 2001 and a gold medalist M.Sc. from the University Technology Malaysia (UTM), in 2009. He was awarded a PhD degree in photonics in January 2014. He has published well over 350 academic journal/conference papers and books/chapters on optical soliton communications, telecommunications, fiber lasers, laser physics, waveguide fabrication and application in photonics, photonics, optics, nonlinear fiber optics, quantum cryptography, and bioengineering. He was a junior researcher at the University Technology Malaysia (UTM), Laser and Photonics Center and a postdoctoral research fellow at the University of Malaya (UM), Photonics Research Center (PRC). Currently, he is a senior lecturer in the University of Malaya (UM), Photonics Research Center (PRC) under the directorship of Professor Dr. Harith Ahmad.

Inhalt
Introduction on Scaling Issues of Conventional Semiconductors.- Basic Concept of Field Effect Transistors.- Methodology for Modelling of Surface Potemntial, Ionization and Breakdown of Graphene Field Effect Transistors.- Results and Discussion on Ionization and Breakdown of Grapehene Field Efffect Transistor.- Conclusion and Futureworks on High Voltage Application of Graphene.