This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.

Emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design Covers two broad domains such as state-of-the-art research in GaN HEMT and Ga2O3 HEMT Presents basic operation principle of HEMT, types of HEMT structures, and semiconductor device physics

Autorentext

Trupti Ranjan Lenka is an Assistant Professor in the Department of Electronics and Communication Engineering, National Institute of Technology Silchar, India. He received a B.E. degree in Electronics and Communication Engineering from Berhampur University, Odisha, in 2000, M.Tech. degree in VLSI Design from Dr. A. P. J. Abdul Kalam Technical University, Lucknow, in 2007 and a Ph.D. degree in Microelectronics Engineering from Sambalpur University, Odisha, in 2012. He was Visiting Researcher at Helen and John C. Hartmann Department of Electrical and Computer Engineering, New Jersey Institute of Technology (NJIT), Newark, New Jersey, the USA, in 2019, and Solar Energy Research Institute of Singapore (SERIS), National University of Singapore (NUS), Singapore, in 2018. He received Distinguished Faculty Award by NIT Silchar in 2019. He has supervised 12 Ph.D. and 23 M.Tech. students under his guidance. He has published 105 journal research papers, 17 book chapters, and 58 conference papers to his credit and delivered 21 invited talks. His research interests include nanoelectronics: III-nitride heterojunction devices (HEMT, NW LED), solar photovoltaics, energy harvesting using MEMS, and nanotechnology.

Hieu Pham Trung Nguyen received his Ph.D. degree in Electrical Engineering from McGill University, Canada, in 2012. He joined the New Jersey Institute of Technology in 2014 and currently is an Associate Professor in the Department of Electrical and Computer Engineering. He is a recipient of the 2020 NSF CAREER Award, the 2019 Saul K Fenster Innovation in Engineering Education Ward, the SPIE Scholarship in Optics and Photonics 2012 (for his potential long-range contributions to the field of optics, photonics, or related field), the Best Student Paper Award 2011 (Second Place) at the IEEE Photonics Conference 2011, and the Outstanding Student Paper Award at the 28th North American Molecular Beam Epitaxy Conference, 2011. He is serving as a reviewer for over 70 journals. His research areas are electronic and photonic devices.

Inhalt
Operation Principle of AlGaN/GaN HEMT.- Performance Analysis of AlGaN/GaN HEMT for RF and Microwave Nanoelectronics Applications.- RF and Microwave Characteristics of AlGaN/AlN/GaN HEMT for 5G Communication.