The book is written not only for specialists in positron annihilation but for all scientists, technicians, and students who are interested in defects in semiconductors. It explains in detail the theoretical basics necessary to understand the experimental results presented.

This book is the first textbook-like introduction to the basics and applications of the analytical technique of positron annihilation for defect studies in semiconductors. Includes supplementary material: sn.pub/extras

Inhalt
1 Introduction.- 2 Experimental Techniques.- 3 Basics of Positron Annihilation in Semiconductors.- 4 Defect Characterization in Elemental Semiconductors.- 5 Defect Characterization in IIIV Compounds.- 6 Defect Characterization in IIVI Compounds.- 7 Defect Characterization in Other Compounds.- 8 Applications of Positron Annihilation in Defect Engineering.- 9 Comparison of Positron Annihilation with Other Defect-Sensitive Techniques.- A1 Semiconductor Data.- A2 Trapping Model Equations.- References.