Inhalt

I. Fundamentals Chairpersons: D.E. Harrison and C.A. Evans, Jr..- Invited: The Dynamics of Ion-Solid Interactions: A Basis for Understanding SIMS.- Invited: Simultaneous Measurements of Photon and Secondary Ion Emissions from Ion-Bombarded Metal Surfaces.- Atom Ejection Mechanisms and Models.- New Models of Sputtering and Ion Knock-On Mixing.- Clustering Distances in Secondary Ion Mass Spectrometry.- Basic Aspects in the Sputtering of Atoms, Ions, and Excited States.- Cluster Formation in SIMS: CO on PdAg.- Effect of Partial Oxygen Pressure on Metal Single Crystals Bombarded by Noble Gas Ions.- A Comparison of Absolute Yields of Excited Neutrals and Positive Ions from Ion-Bombarded Surfaces.- Correlation Between the Spectral Ionization Probability of Sputtered Atoms and the Electron Density of States.- Physical Aspects of the Valence Model's Parameters.- Negative Ion Emission from Surfaces Covered with Cesium and Bombarded by Noble Gas Ions.- Angle-Resolved SIMS-A New Technique for the Determination of Surface Structure.- II. Quantitation Chairpersons: D.B. Wittry and P. Williams.- Invited: Factors Influencing Secondary Ion Yields.- Invited: Instrumental Effects on Quantitative Analysis by Secondary Ion Mass Spectrometry.- A Quantitative Model for the Effects on Secondary Ion Emission of Gaseous Absorption at Solid Surfaces Under Noble Gas Ion Bombardment.- The Application of Ion Implantation to Quantitative SIMS Analysis.- Energy Filtering and Quantitative SIMS Analysis of Silicates for Major and Trace Elements.- Quantitative Analysis of Doped GaAs by Quadrupole SIMS.- Trace Element Analysis of Silicates by Ion Microprobe.- Imaging of Element Distributions by Ion Microprobe.- Secondary Ion Emission from Titanium Alloys Under Argon and Oxygen Bombardment.- Effect of Alloying in Secondary Ion Emission from AgPd and CrNi Systems.- III. Semiconductors Chairpersons: C.W. Magee and W. Werner.- Invited: Quantitation of SIMS for Semiconductor Processing Technology.- Problems Encountered in Depth Profiling of Nitrogen and Oxygen in Silicon by Means of Secondary Ion Mass Spectrometry.- Depth Profiling of Phosphorus in Silicon Using Cesium Bombardment Negative SIMS.- Chromium and Iron Determination in GaAs Epitaxial Layers.- Thermal Redistribution of Cr in GaAs Due to Damage, Stress and Concentration Gradients.- On-Line Sputter Rate Measurements During SIMS, AES Depth Profiling.- Laser Induced Redistribution of Ion Implanted and Surface Deposited B in Silicon: A SIMS Study.- SIMS Identification of Impurity Segregation to Grain Boundaries in Cast Multigrained Silicon.- SIMS Studies in Compound Semiconductors.- Characterization for Composition and Uniformity of MCVD Glass Film by Secondary Ion Mass Spectrometry (SIMS).- SIMS Study of Metallized Silicon Semiconductors.- IV. Static SIMS Chairperson: A. Benninghoven.- Invited: Molecular Secondary Ion Emission.- Invited: Analytical Applications of SIMS.- Static SIMS Investigations of Ami no Acid Mixtures.- Static SIMS of Ami no Acid Overlayers.- Static SIMS Studies of Metal-Covered W(110) Surfaces.- Investigation of Surface Reactions by SIMS: Nickel-Oxygen-Hydrogen- Interacti on.- Study of Inorganic Salts by Static and Dynamic Secondary Ion Mass Spectrometry (SIMS).- Secondary Ion Mass Spectrometry of Ami no Acids by Proton and Alkali Ion Attachment.- V. Metallurgy Chairpersons: J.D. Brown and A.P. von Rosenstiel.- Invited: Application of SIMS to Analysis of Steels.- Investigation of Metal Corrosion Mechanisms Using Stable Isotopes with the Ion Microprobe.- Investigations of Corrosion Layers on Mild Steel with a Direct Imaging Mass Spectrometer.- The Use of SIMS in the Oxidation of Metals.- Influence of Atomic Concentrations on Ion Emission Yields of Alloys Flooded with Oxygen.- Application of SIMS and AES to Environmental Studies of Fatigue Crack Growth in Aluminum Alloys.- Application of Ion Microprobe to Surface Properties of Cold-Rolled Steel Sheet.- Some Applications of SIMS and Other Surface Sensitive Techniques for the Chemical Characterization of Industrial Steel Surfaces.- VI. Instrumentation Chairpersons: D.S. Simons and F.G. Rüdenauer.- Invited: Analytical Requirements of SIMS and the Instrumental Implications.- Invited: Some Considerations on Secondary Ion Optics.- A Compact Cs-Evaporator for High Sensitivity SIMS.- Comparison of Laser Ionization and Secondary Ion Mass Spectrometry for Organic Materials Analysis.- Application to Semiconductor Characterization of a Mass-Filtered, Microfocussed Ion Gun and High-Transmission Quadrupole.- Transmission of Quadrupole Mass Spectrometers for SIMS Studies.- SIMS Apparatus to Study Ion Impact Desorption.- Digital Mass Control for an Ion Microprobe Mass Analyzer.- Computer-Controlled Peak-Top Search Procedure.- A Computer-Based Instrument Control and Data Acquisition System for a Quadrupole Secondary Ion Mass Spectrometry Instrument.- How to Make the Most of the SIMS Method by Means of the Scanning Ion Microscope A-DIDA.- Sputtered Neutral Mass Spectrometry Using a Microwave Plasma.- Investigation of Monolayers at High Primary Ion Current Densities.- VII. Geology Chairpersons: J. Okano and C. Meyer.- SIMS Measurement of Mg Isotopic Ratio in a Chondrite.- Negative Molecular Ion Analysis of Inorganic Sulfur-Oxygen Salts by SIMS.- SIMS Measurements of Tracer Diffusivity of Oxygen in Titaniun Dioxides and Sulfur in a Calcium Sulfide.- SIMS Analysis of TiO2, Including Depth Profiling.- Ion Microprobe Analysis of Small Heavy Metal Particles and Their Compounds.- VIII. Panel Discussion Chairperson: I.L. Kofsky.- Applications of Particle Accelerator-Assisted Ultra-High Sensitivity SIMS.- IX. Biology Chairpersons: M.S. Burns and G.H. Morrison.- Invited: Biomedical Applications of Secondary Ion Emission MicroAnalysis.- Diffusible Ion Localization in Biological Tissue by Ion Microscopy.- Determination of Isotope Ratios of Calcium and Iron in Human Blood by Secondary Ion Mass Spectrometry.- Biogenic and Non-Biogenic Carbonates of Calcium and Magnesium: New Studies by Secondary Ion Imaging.- Localization of Elements in Botanical Materials by Secondary Ion Mass Spectrometry.- Secondary Ion Emission Microanalysis of the Pigments Associated with the Eye: Preliminary Data.- Comparison of Spectra of Biochemical Compounds and Tissue Preparations.- X. Combined Techniques Chairpersons: C. Johnson and W.H. Christie.- Invited: High Sensitivity SIMS Using DC Accelerators.- Combined SIMS, AES, and XPS Investigations of Oxygen-Covered 3d Transition Metal Surfaces.- Oxidation of Nickel Base Alloys Flooded with Oxygen Under Ionic Bombardment.- Matrix Effect Studies by Comparative SNMS and SIMS of Oxidized Ce, Gd and Ta Surfaces.- XPS/LEED/SIMS Study of the Ni(100)/02 System: Origin of the Two 0(1s) Features.- Combined SIMS, AES and XPS Study of CdxHg1_xTe.- SIMS Depth Profiling of Thin and Ultrathin Films of Covalently Bonded Organic Overlayers.- Alpha-Recoil and Fission Fragment Induced Desorption of Secondary Ions.- XI. Postdeadline Papers.- Use of the IMS-3f High Mass Resolving Power.- The Bombardment Angle Dependence of the Sputtering and Secondary Ion Yield for Oxygen Ion Bombardment of Silicon.- Secondary Ion Mass Spectrometry of Small Molecules Held at Cryogenic Temperatures.- Index of Authors.