This volume contains the proceedings of the third in a series of biennial NEC Symposia on Fundamental Approaches to New Material Phases sponsored by the NEC Corporation, Tokyo, Japan. The symposium was held from October 7 to 11, 1990, at the Hakone Kanko H9tel in Hakone. About 40 invited participants stayed together, became involved in intense discussions, and freely exchanged ideas both in and out of the conference room, which faced Mt. Fuji, the beautiful lake Ashinoko, and the quiet landscape in the old crater. The title of this volume, Ordering at Surfaces and Interfaces, which was also the title of the third symposium, describes the aim of the symposium: to discuss ordering properties and their underlying mechanisms at surfaces and interfaces. The topics treated include the reconstruction of surfaces of semiconductors and metals, atomic and magnetic ordering at interfaces, theoretical tools to study or­ dering mechanisms at surfaces and interfaces, ordering in adsorbate-surface sys­ tems, such as alkali-adsorbed silicon surfaces, electric current effects on semicon­ ductor surfaces and many related STM (scanning tunneling microscopy) results.

Inhalt

I Surface Analysis.- Ion and X-Ray Scattering Studies of Surface Disorder.- Properties of Graphite and Monolayer Graphite Studied by Electron Energy Loss Spectroscopy and Scanning Tunneling Microscopy.- Surface Order and Disorder Studied by Scanning Tunneling Microscopy.- Electron Holography and Its Applications to Surface Observation.- Effect of Tip Apex on STM and STS.- Scanning Tunneling Microscopy of Stepped Si(111) Surfaces.- Energetics of Surface Atomic Processes.- Surface and Interface Structural Analysis by Coaxial Impact Collision Ion Scattering Spectroscopy (CAICISS).- II Surface Ordering.- Lattice Gas Simulation of the Surface Reconstruction of Si(111) and Ge(111).- Surface Dynamics on Si(001) Studied with a High Temperature Scanning Tunneling Microscope.- Phase Transition of Si(001) Studied by LEED.- Angle-Resolved Electron Spectroscopy Study of the Surfaces and Interfaces of Silicon.- Ordering and Electronic Structure of the Si(001) Surface.- Aspects of Core-Level Photoemission from Semiconductor Surfaces: Resonant Emission and Final State Interaction.- Molecular-Dynamics Simulation of the Structural Phase Transition on the Si(100) Surface.- Short Range Order in the Phase Transition of the Si(100) Surface Reconstruction.- Mechanism of Reconstruction of Si(100) Surfaces.- Scanning Tunneling Microscopy of a Metastable c(4 Structure Formed on a Si(100) Surface.- Structural Phase Transition on the W(001) Surface.- Ab-Initio Investigations of Surfaces and Grain Boundaries in Germanium.- Structure Ordering at the Si(111) Surface.- Theoretical Modeling of Structure and Dynamics of Metal Surfaces.- III Adsorbed Surfaces.- Alkali Metal Ordering on Semiconductor Surfaces and Interfaces.- Surface Electromigration of Au on Si(111) Studied by REM.- A Study of Alkali Metal Adsorption on Si Surfaces by Field Ion Scanning Tunneling Microscopy.- Interaction Between Donors and Acceptors on Metal Surfaces.- Reactivity of Surface Hydroxyl Groups with Metal Complex Compounds.- Dynamics of Adsorbed Molecules at Surfaces.- Hetero-electromigration on Stepped Si(111).- Symmetry and Ordering of Metal Deposits on the Si(111) 7Surface.- $$(\sqrt 3 \times \sqrt 3 )$$ B Structure Covered with Molecular Beam Epitaxial Si.- IV Interface Ordering.- Structure of Silicide Surfaces and Interfaces.- Structural and Magnetic Ordering at Interfaces of Metallic Superlattices.- Magnetic Properties of Interfaces and Magnetoresistance in Multilayers.- Electronic Structures and Magnetism of Ferromagnetic/Antiferromagnetic Multilayers.- Energetics of Metal-Metal Interfaces.- Structure at the Yb/GaAs Interface Studied by Anomalous X-Ray Scattering.- Interfacial Superstructure and Schottky-Barrier Height of Metal/GaAs Contacts.- 7Superstructure at the Amorphous Si/Si(111) Interface and Its Modification During Solid Phase Epitaxial Growth.- Electronic Structure Calculations of Complex Surfaces and Interfaces.- Natural Superlattice in Ga0.5In0.5P as a Result of Surface Reconstruction.- Index of Contributors.- List of Participants.