This volume first introduces the student or practicing engineer to SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms which are observed in common high-speed microprocessor designs. Rules of thumb and comparisons to conventional bulk CMOS are offered to guide implementation. SOI's ultimate advantage, however, may lie in the unique circuit topologies it supports; a number of these novel new approaches are described as well. The book draws upon the latest industry literature as well as the firsthand experiences of its authors. It is an ideal introduction to the concepts of governing SOI use and provides a firm foundation for further study of this exciting new technology paradigm.

Klappentext

This book first introduces SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms, which are observed in common high-speed microprocessor designs. The book also offers rules of thumb and comparisons to conventional bulk CMOS to guide implementation and describes a number of unique circuit topologies that SOI supports.

Inhalt

Preface. 1: The Time for SOI. 1.1. Technology Scaling in VLSI. 1.2. The End of Moore's Law? 1.3. The Case for PD-SOI. 1.4. Summary. 2: SOI Device Structures. 2.1. Introduction. 2.2. Wafer Fabrication. 2.3. Patterning SOI Regions. 2.4. Transistor Structures. 2.5. Diodes. 2.6. Resistors. 2.7. Decoupling Capacitors. 2.8. Summary. 3: SOI Device Electrical Properties. 3.1. Introduction. 3.2. SOI MOSFET's Junction Diode. 3.3. Impact Ionization. 3.4. Floating Body Effects. 3.5. SOI MOSFET Modeling. 3.6. Insulator-Related Effects. 3.7. Composite Responses. 3.8. Summary. 4: Static Circuit Design Response. 4.1. Introduction. 4.2. Parameters of Interest to Circuit Designers. 4.3. First Switch vs. Second Switch. 4.4. First Switch vs. Steady State. 4.5. Static Circuit Response to SOI. 4.6. Passgate Circuit Response. 4.7. Summary. 5: Dynamic Circuit Design Considerations. 5.1. Introduction. 5.2. Dynamic Circuit Response. 5.3. Preferred Dynamic Design Practices. 5.4. Keeping Dynamic SOI Problems in Perspective. 5.5. Soft Errors in Dynamic Logic. 5.6. Dynamic Logic Performance. 5.7. Conclusions. 6: SRAM Cache Design Considerations. 6.1. Overview. 6.2. Writing a Cell. 6.3. Reading a Cell. 6.4. Cell Stability and Cell Bias. 6.5. SRAM Noise Considerations. 6.6. Precharging Circuitry.6.7. Soft Error Upsets. 6.8. Array Test in PD-SOI. 6.9. Summary. 7: Specialized Function Circuits in SOI. 7.1. Introduction. 7.2. Timing Elements. 7.3. Latch Response in SOI. 7.4. Input/Output Circuitry. 7.5. Electro-Static Discharge (ESD) Protection. 7.6. Summary. 8: Global Chip Design Considerations. 8.1. Introduction. 8.2. Temperature Effects. 8.3. Noise Immunity. 8.4. Power Consumption. 8.5. Power Supply Issues Noise. 8.6. System Performance. 8.7. SOI Timing Variability. 8.8. Summary. 9: Future Opportunities in SOI. 9.1. Introduction. 9.2. Floating body Effect Suppression. 9.3. DTCMOS. 9.4. DGCMOS. 9.5. 3-Dimensional SOI. 9.6. Future Scaling Opportunities. 9.7. Summary. About the Authors. Index.