This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.

Autorentext

Prof. Dr. Eng. Kamakhya Prasad Ghatak is the first recipient of the degree of Doctor of Engineering of Jadavpur University in 1991 since the University inception in 1955. He is the principal co-author of more than 250 scientific research papers in international peer reviewed journals and the said five research monographs. He is the invited speaker of SPIE, MRS etc. and is the supervisor of more than two dozens of PhD candidates. His teaching interests are non-linear circuit theory, electron transport and nonlinear mechanics. His present research interests are nano science and technology besides number theory.

Dr. Sitangshu Bhattacharya obtained his M.Sc. and PhD degrees in 2003 and 2009 respectively. He is the co-author of more than 50 scientific research papers in electro-thermal transport phenomena in semiconductor nanostructures in international peer reviewed journals and five research monographs among them, three from Springer series in Materials Science (Vols. 116,137 and 167), one from Springer Series in Nanostructure Science and Technology and one from Springer series in Solid-State Sciences (Vol. 170) respectively. His present research interest is in electro-thermal management in quantum effect devices and interconnects.

Inhalt

Part I Influence of Light Waves on the DSL in Optoelectronic Semiconductors.- The DSL for III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- The DSL For Ultra-Thin Films of III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- The DSL in the Presence of Quantizing Magnetic Field for III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- The DSL in N-Channel Inversion Layers of III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- The DSL in NIPI Structures of III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- Part II Influence of Quantum Confinement on the DSL in Non-Parabolic Semiconductors.- The DSL in Quantum Wells of Non-Parabolic Semiconductors.- The DSL in NIPI Structures of Non-Parabolic Semiconductors.- The DSL in Inversion Layers of Non-Parabolic Semiconductors.- Part III Influence of Intense Electric Field on the DSL in Optoelectronic Semiconductors.- The DSL for III-V, Ternary and Quaternary Semiconductors Under Intense Electric Field.- The DSL for Quantum Wells of III-V, Ternary and Quaternary Semiconductors Under Intense Electric Field.- The DSL in the Presence of Quantizing Magnetic Field for III-V, Ternary and Quaternary Semiconductors Under Intense Electric Field.- The DSL in N-Channel Inversion Layers of III-V, Ternary and Quaternary Semiconductors Under Intense Electric Field.- The DSL in NIPI Structures of III-V, Ternary and Quaternary Semiconductors Under Intense Electric Field.- Conclusions and Future Research.