Inhalt

Radiation Damage.- Radiation Damage in Metals and Semiconductors.- Ionization Effects in Self-Interstitial Migration and Implant Damage Annealing in Silicon.- Internal Friction Study of Point Defects in Boron-Implanted Silicon.- Strain Induced Effects on EPR Centers in Silicon Generated by P+ Ion Implantation.- Calorimetric Determination of Optical Absorption in Proton-Bombarded GaAs.- Defect Aggregation in Ion-Implanted GaAs.- On Silicon Amorphisation During Different Mass Ions Implantation.- Silicon.- The Depth Distribution of Phosphorus Ions Implanted into Silicon Crystals.- Arsenic Implanted and Implanted-Diffused Profiles in Silicon Using Secondary Ion Emission and Differential Resistance.- The Effect of Ion Implantation on the Lattice Location of Arsenic in Arsenic-Doped Si.- Concentration Profiles of Arsenic Implanted in Silicon.- Energy Dependence and Annealing Behaviour of Boron Range Distributions in Silicon.- Experimental Analysis of Concentration Profiles of Boron Implanted in Silicon.- Channeling Analysis and Electrical Behavior of Boron Implanted Silicon.- Si-SiO2 Interface States Induced by Implantation of Various Ion Species.- Theory and Range.- Theory of the Spatial Distributions of Ion Range and Energy Deposition.- Theoretical and Experimental Studies on Lateral Spread of Implanted Ions.- Determination of the Critical Dose for Different Mass Ions Implanted into Silicon.- Boron Doping Profiles and Annealing Behavior of Amorphous Implanted Silicon Layers.- Ranges and Distributions of Ions Implanted in Dielectrics.- Computation of Third Central Moments for Projected Range Distributions of Common Ion-Implanted Dopants in Silicon.- Techniques and Novel Applications.- The Influence of the Amorphous Phase on Boron Atom Distributions in Ion Implanted Silicon.- The Application of Ion Implantation to the Study of Diffusion of Boron in Silicon.- The Isothermal Annealing of Defects Created in Phosphorous Ion Doped Silicon by: Additional Bombardment with Phosphorous Ions.- Physical Profile Measurements in Insulating Layers Using the Ion Analyser.- Lattice Location of Low-Z Impurities in Medium-Z Targets Using Ion-Induced X-Rays.- Ion Implantation Damage Gettering and Phosphorus Diffusion Gettering; of Cu and Au in Silicon.- The Diffusion of Cu Through Si and Gettering at Ion Damaged Surface Layers in the Presence of O.- II-VI Compound Semiconductors.- Photoluminescence. Optical Absorption, and Cathodoluminescence in Ion Implanted CdS.- Annealing Studies of Broad-Band Luminescence from Ion-Implanted ZnSe.- Thermoluminescence and Related Experiments on Br-Implanted ZnS Single Crystals.- Lattice Disorder in Br, CI, and F Implanted CdS: Channeling Study.- Lattice Disorder in Br, CI, and F Implanted CdS: Optical Reflection Study.- Electroluminescence and Photoluminescence of N+ Implanted CdS.- Metals.- The Influence of Ion Implantation upon the High Temperature Oxidation of Titanium and Stainless Steel.- The Effects of Yttrium Ion Implantation upon the Oxidation Behaviour of an Austenitic Stainless Steel.- Frictional Changes Induced by the Ion Implantation of Steel.- Possible Radiation Enhanced Diffusion of Nickel Ions in Titanium.- The Influence of Ion Bombardment on the Corrosion of Metals.- Implantation and Diffusion of Cu in Be.- Ion Implantation and Radiation Damage in Vanadium.- An Exacting Test of the Channeling Technique for Atom Location: Br Implanted into Fe.- The Lattice Site Location of C Implanted into Fe.- Other Materials.- Ion Implantation Effects in Magnetic Bubble Garnets.- Nucleation and Crystallization of Ion-Implanted Glass.- Lateral Stress Measurements in Ion-Implanted Metals and Insulators.- Changes in the Electrical Properties of Thin Anodic TiO2 Films Induced by Ion Implantation.- Electrical and Structural Changes in Ion-Bombarded TiO2.- Ion Implantation in Silver Bromide.- Refractive Index Profiles Produced in Silica Glass by Ion Implantations.- Ion Implanted Silicon-Metal Systems Si1-xMx.- III-V Compound Semiconductors.- Damage Profiles in Ion-Implanted Semiconductors at Low (25°K) Temperatures.- Lattice Disorder Produced in GaAs by Cadmium Implantation.- Compensation of GaAs by Oxygen Implantation.- Properties of Tellurium Implanted Gallium Arsenide.- Vaporization of Ion-Implanted GaAs.