The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.

Autorentext
Steve Pearton is one of the leaders in the field of GaN research and a co-author of another related successful Springer book.

Inhalt

UV LEDs.- Non-Polar GaN Growth.- High-Quality AlGaN Alloys.- Bulk AlN for UV LEDs.- Enhancement of the Light-Extraction Efficiency of GaN-Based Light Emitting Diodes.- GaN-Based Sensors.- III-N Alloys for Solar Power Conversion.- GaN HEMT Technology.- GaN Power Devices.- Nitride Nanostructures.- Radiation-Induced Defects in GaN.- Electron Injection Effects in GaN.- Progress and Prospect of Rare-Earth Nitrides.- Advances in PLD of ZnO and Related Compounds.- ZnO Nanowires and p-Type Doping.- Multifunctional ZnO Structures.- ZnO/MgZnO Quantum Wells.- GZO TFTs.