Denise Reichel studies the delicate subject of temperature measurement during lamp-based annealing of semiconductors, in particular during flash lamp annealing. The approach of background-correction using amplitude-modulated light to obtain the sample reflectivity is reinvented from rapid thermal annealing to apply to millisecond annealing. The author presents a new method independent of the lamp operation to obtain this amplitude modulation and derives a formula to describe the process. Further, she investigates the variables of the formula in depth to validate the method's suitability for background-corrected temperature measurement. The experimental results finally proof its power for elevated temperatures. Contents

• Fundamentals of flash lamp annealing of shallow Boron-doped Silicon
• Fundamentals of surface temperature measurements during flash lamp annealing
• Concept of ripple pyrometry during flash lamp annealing
• Ripple pyrometry for flash lamp annealing - Experiments

Target Groups

·Researchers and students from the fields of materials sciences and physics

·Practitioners from microelectronics and photovoltaics industry

About the Author Dr. Denise Reichel currently works in technical sales and consulting for temperature measurement needs and as a lecturer for thermodynamics and heat and mass transfer.

Autorentext

Dr. Denise Reichel currently works in technical sales and consulting for temperature measurement needs and as a lecturer for thermodynamics and heat and mass transfer.

Inhalt
Introduction and motivation.- Fundamentals of flash lamp annealing of shallow Boron-doped Silicon.- Fundamentals of surface temperature measurements during flash lamp annealing.- Concept of ripple pyrometry during flash lamp annealing.- Ripple pyrometry for flash lamp annealing.- Experiments ripple pyrometry during flash lamp annealing.- Closing discussion and outlook.