"Semiconductor Surfaces and Interfaces" behandelt die strukturellen und elektronischen Eigenschaften von Halbleiteroberflächen und Interfaces. Da es auf dem Gebiet in den letzten Jahren ganz wesentliche Erfolge gab, behandelt die vorliegende Monographie den Stand der entsprechenden Halöbleiterphysik und -technologie konkurrenzlos auf dem neuesten Stand.

Previous edition already in use for courses in numerous physics, electrical engineering and materials science departments. This long-awaited new edition will be welcomed by students and researchers alike.

Only comprehensive and up-to-date textbook in its field Extensive reference list Includes supplementary material: sn.pub/extras

Autorentext

Winfried Mönch received a Dr.rer.nat. degree from the Georg-August-University of Göttingen in 1961. He spent three years in the Semiconductor Department of the AEG Research Institute Frankfurt-Main before moving to the RWTH Aachen University. There he was awarded the venia legendi for physics in 1968 and became an Associate Professor two years later. In 1974 he was appointed Professor at the University of Duisburg (since 2003 University of Duisburg-Essen) and retired in 1999. He was the first Walter Schottky Visiting Professor at Stanford University in 1981 and received the E.W. Müller Award 1984 from the University of Wisconsin-Milwaukee. He has authored two monographs on semiconductor surfaces and interfaces, which have been published in the Springer Series in Surface Sciences.

Klappentext
Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-induced surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts. Where available, results of more refined calculations are considered. This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.

Inhalt

1. Introduction.- 2. Surface Space-Charge Region in Thermal Equilibrium.- 3. Surface States.- 4. Occupation of Surface States and Surface Band-Bending in Thermal Equilibrium.- 5. Surface S pace-Charge Region in Non-Equilibrium.- 6. Interface States.- 7. Cleaved {110} Surfaces of IIIV and IIVI Compound Semiconductors.- 8. {100} Surfaces of IIIV, IIVI, and IVII Compound Semiconductors with Zincblende Structure.- 9. {100} Surfaces of Diamond, Silicon, Germanium, and Cubic Silicon Carbide.- 10. Diamond, Silicon, and Germanium {111}-2 × 1 Surfaces.- 11. Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces.- 12. Phase Transitions on Silicon and Germanium {111} Surfaces.- 13. {111} Surfaces of Compounds with Zincblende Structure.- 14. Monovalent Adatoms.- 15. Group-III Adatoms on Silicon Surfaces.- 16. Group-V Adatoms.- 17. Oxidation of Silicon and IIIV Compound Semiconductors.- 18. Surface Passivation by Adsorbates and Surfactants.- 19. Semiconductor Interfaces.- References.- Index of Reconstructions and Adsorbates.