Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interfaceinduced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling's electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

Basic standard book Important with respect to semiconductor structures Includes supplementary material: sn.pub/extras

Autorentext

Winfried Mönch received a Dr.rer.nat. degree from the Georg-August-University of Göttingen in 1961. He spent three years in the Semiconductor Department of the AEG Research Institute Frankfurt-Main before moving to the RWTH Aachen University. There he was awarded the venia legendi for physics in 1968 and became an Associate Professor two years later. In 1974 he was appointed Professor at the University of Duisburg (since 2003 University of Duisburg-Essen) and retired in 1999. He was the first Walter Schottky Visiting Professor at Stanford University in 1981 and received the E.W. Müller Award 1984 from the University of Wisconsin-Milwaukee. He has authored two monographs on semiconductor surfaces and interfaces, which have been published in the Springer Series in Surface Sciences.

Inhalt

1. Introduction.- 2. Depletion Layer.- 3. Determination of Barrier Heights and Offsets.- 4. Laterally Inhomogeneous Schottky Contacts.- 5. The IFIGS-and-Electronegativity Theory.- 6. The MIGS-and-Electronegativity Concept: Experiment and Theory.- 7. First-Principles Calculations of Barrier Heights and Valence-Band Offsets.- 8. Temperature and Pressure Effects.- 9. Barrier Heights and Extrinsic Interface Defects.- 10. Extrinsic Interface Dipoles.- 11. Ohmic Contacts.- References.