Semiconductor nanostructures such as nanowires are promising building blocks of future nanoelectronic, nanophotonic and nanosensing devices. Their physical properties are primarily determined by the epitaxy process which is rather different from the conventional thin film growth. This book shows how the advanced nucleation theory can be used in modeling of growth properties, morphology and crystal phase of such nanostructures. The book represents a systematic account of modern nucleation theory in open systems, nanostructure nucleation and growth mechanisms, and possibilities for tuning the nanostructure properties to the desired values.

Leads to a better understanding of synthesis and development of epitaxy techniques Provides an advanced theoretical analysis of nanostructure formation mechanisms Gives a comprehensive theoretical overview of semiconductor nanowires Includes supplementary material: sn.pub/extras

Autorentext
Head of the Department of theoretical physics
Deputy Director of Nanotechnology Centre
Head of the Laboratory of physics of nanostructures
Coordinator of Associated International Laboratory Nanostructures of compound semiconductors, Growth, Properties, Devices (ILNACS)
Deputy Director of Russian-Chinese joint laboratory Zh.I. Alferov laboratory of information optoelectronics and nanoheterostructures

Inhalt
Foreword by Zh. I. Alferov.- Introduction.- Fundamentals of nucleation theory.- Kinetics of phase transition.- Quantum dots and nanoneedles.- Growth of semiconductor nanowires.- Crystal structure of III-V nanowires.