In the series of International Winter Schools on New Developments in Solid State Physics, the fourth one was devoted to the subject: "Two Dimensional Systems: Physics and Devices". For the second time the pro ceedings of one of these Winter Schools appear as a volume in the Springer Series in Solid-State Sciences (the earlier proceedings were published as Vol. 53). The school was held in the castle of MauterndorfjSalzburg (Austria) February 24-28, 1986. These proceedings contain contributions ba:sed on the thirty invited lectures. The school was attended by 179 registered participants (40% students), who came from western European countries, the United States of America, Japan, the People's Republic of China and Poland. As far as the subjects are conterned, several papers deal with the growth and characterization of heterostructures. Dynamical RHEED tech niques are described as a tool for in situ studies of MBE growth mech anisms. Various growth techniques, including MBE, MOMBE, MOCVD and modifications of these, are discussed. The limiting fa.ctors for the carrier mobilities and the inftuence of the spacer thickness in single het erostructures of GaAs/GaAIAs seem to be understood and are no longer a matter of controversy. In addition, the growth of two fascinating systems, Si/SiGe and Hg _ Cd Te/CdTe, is discussed in detail.

Inhalt
I Epitaxial Growth: Methods and Characterization.- New Epitaxial Growth Methods and Their Application to Quantum Wells and 2DEG Structures.- Metalorganic MBE A New Technique for the Growth of IIIV Semiconductor Layers.- Recent Developments in MBE Growth and Properties of Hg1-xCdxTe/CdTe Superlattices.- Transport Properties of Two-Dimensional Electron and Hole Gases in GaAs/AlGaAs Heterostructures.- In Situ Study of MBE Growth Mechanisms Using RHEED Techniques Some Consequences of Multiple Scattering.- Growth Mode and Interface Structure of MBE Grown SiGe Structures.- II Band Discontinuities.- Elementary Tight-Binding Theory of Schottky-Barrier and Heterojunction Band Line-Ups.- Electrical Measurements of Band Discontinuities at Heterostructure Interfaces.- Heuristic Approach to Band-Edge Discontinuities in Heterostructures.- III Resonant Tunnelling, Multi-Quantum-Well and Superlattice Structures.- Quantum Tunnelling of Electrons Through IIIV Heterostructure Barriers.- Recent Results on IIIV Superlattices and Quantum Well Structures.- Envelope Function Calculations for Superlattices.- Optical and Electronic Properties of Si/SiGe Superlattices.- Resonant Tunneling Devices and Optoelectronic Ge/Si Superlattice Structures.- IV Bound States in Quantum Wells.- Far Infrared Studies of Shallow Donors in GaAs-AlGaAs Quantum Wells.- Magneto-Impurities and Quantum Wells.- The ?(z) Doping Layer: Impurities in the 2-d World of Layered Systems.- V Quantum Hall Effects and Density of States of Landau Levels.- Quantum Hall Effect Experiments at Microwave Frequencies.- The Fractional Quantum Hall Effect in GaAs-GaAlAs Heterojunctions.- Density of States of Landau Levels from Activated Transport and Capacitance Experiments.- Density of States of Landau Levels fromSpecific Heat and Magnetization Experiments.- The Integer Quantum Hall Effect: An Introduction to the Present State of the Theory.- The Fractional Quantum Hall Effect.- VI New Structures and Devices.- Microwave Performances of GaAlAs/GaAs Heterostructure Devices.- Luminescence and Transport Properties of GaAs Sawtooth Doping Superlattices.- Physics and Applications of Doping Superlattices.- Electronic Excitations in Microstructured Two-Dimensional Systems.- VII High Field Transport and Optical Excitation.- Carrier Transport in Semiconductor Devices of Very Small Dimensions.- Parallel-Transport Experiments in 2D Systems.- Time-Resolved Spectroscopy of Hot Carriers in Quantum Wells.- Index of Contributors.