Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics. The operational stabilities of such TFTs are thus important, strongly depending on the nature and density of charge traps present at the channel/dielectric interface or in the thin-film channel itself.

This book contains how to characterize these traps, starting from the device physics of field-effect transistor (FET). Unlike conventional analysis techniques which are away from well-resolving spectral results, newly-introduced photo-excited charge-collection spectroscopy (PECCS) utilizes the photo-induced threshold voltage response from any type of working transistor devices with organic-, inorganic-, and even nano-channels, directly probing on the traps. So, our technique PECCS has been discussed through more than ten refereed-journal papers in the fields of device electronics, applied physics, applied chemistry, nano-devices and materials science, finally finding a need to be summarized with several chapters in a short book. Device physics and instrumentations of PECCS are well addressed respectively, in the first and second chapters, for the next chapters addressing real applications to organic, oxide, and nanostructured FETs. This book would provide benefits since its contents are not only educational and basic principle-supportive but also applicable and in-house operational.

New and easy method to quantitatively measure the trap density of state in FETs as a measure of device instability are included New and easy method to characterize the electronic structure of organic semiconductor are described Method to measure the interface traps of nanostructure FETs included in the book

Autorentext

Seongil Im, applied physicist earned his Ph.D from Univ. of California at Berkeley at the dept. of MSE in 1994 and worked as a research fellow at the dept. of Applied Physics and Electrical Engineering in CALTECH from 1995 till 1996. He joined the dept. of MSE at Yonsei Univ. as an assistant professor in 1997. Currently he is a professor at Physics department. His research expertise is device physics and detailed research subjects are Oxide and Organic Thin-Film Electronics, Nanowire and Nanosheet FETs, and Photon-probe characterizations for device stabilities. He has published over ~200 peer-review journal papers including many of Applied Physics Letters, Advanced Materials, Nano Letters, Journal of Materials Chemistry, and IEEE Electron Device Letters, etc. He is the recipient of year 2012 Yonsei University Academic Award and has worked as a referee of many journal papers of Wiely, AIP, ACS, and IEEE publishers. More than 20 invited talks in international symposiums he has given.

Youn-Gyoung Chang, senior research engineer at LG Display R&D center from 1998 till now, received her MS degree of Materials Science and Engineering at Gwangju Institute Science in 1998 after BS of Physics at Ewha Womans Univ. in 1995. Since she joined LG Display, her career covers low temperature a-Si TFT development and driver panel design, LCD integration-process, printable TFTs-related back plane, and the instability analysis of oxide TFTs. She has published several journal papers sucha as IEEE Electron Device Letters, working as a part time Ph.D student at the department of physics, Yonsei University, Seoul, Korea.

Inhalt

Chapter 1 Device Stability and Photo-Excited Charge-Collection Spectroscopy.- Chapter 2 Instrumentations for PECCS.- Chapter 3 PECCS measurements in Organic FETs.- Chapter 4 PECCS measurements in Oxide FETs.- Chapter 5 PECCS measurements in Nanostructure FETs.- Chapter 6 Summary and limiting factors of PECCS.