Semiconductor Interfaces: Formation and Properties

The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.

Autorentext
Dr. Nino Boccara is Professor Emeritus of Physics at the University of Illinois at Chicago, Professor Emeritus of Mathematics at the Ecole Supérieure de Physique et Chimie de la Ville de Paris, and Former Director of Research in Theoretical Physics at the CNRS.

Klappentext

The trend towards miniaturization of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role upon semiconductor interfaces. Great advances have recently been made in the production of new thin-film materials and in the characterization of their interfacial properties down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures given by specialists at the International Winter School on "Semiconductor Interfaces: Formation and Properties", which was held at the Centre de Physique des Houches from 24 February to 6 March, 1987. The following topics are particularly emphasised: - Interface formation, including molecular beam epitaxy, the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. - Characterization down to the atomic scale using techniques such as STM, HRTEM, SEXAFS and SEELFS. - Specific physical properties of the interfaces and their prospective device applications.

Inhalt
I Introduction.- An Introduction to the Formation and Properties of Semiconductor Interfaces.- II Experimental Study of the Formation of Semiconductor Interfaces.- Formation of Semiconductor Interfaces During Molecular Beam Epitaxy.- Build-up and Characterization of Artificial Surfaces for III-V Compound Semiconductors.- III Structural Characterization of the Interfaces.- Atomic Structure of Semiconductor Surfaces.- Monolayer Sensitive X-Ray Diffraction Techniques: A Short Guided Tour Through the Literature.- SEXAFS for Semiconductor Interface Studies.- XANES and XARS for Semiconductor Interface Studies.- Recent Progress in Electron Spectroscopy: Application to the Local Geometry Determination at Surfaces and Interfaces.- On the Use of Electron Microscopy in the Study of Semiconductor Interfaces.- Analytical Scanning Electron Microscopy Under Ultra High Vacuum.- Scanning Tunneling Microscopy and Spectroscopy.- Field Emission Microscopy for Analysis of Semiconductor Surfaces.- Surface and Interface Studies with MeV Ion Beams.- Surface Characterization by Low-Energy Ion Scattering.- IV Electronic Properties of Interfaces.- Band Structure Theory of Semiconductor Surfaces and Interfaces.- Electronic Properties of Semiconductors: Fermi Level Pinning in Schottky Barriers and Band Line-up in Semiconductors.- Photoemission and Inverse Photoemission from Semiconductor Interfaces.- Photoelectron Spectroscopies: Probes of Chemical Bonding and Electronic Properties at Semiconductor Interfaces.- Two-Photon Photoemission in Semiconductors.- Formation and Electrical Properties of Metal-Semiconductor Contacts.- Deep Level Transient Spectroscopy for Semiconductor Surface and Interface Analysis.- Admittance Spectroscopy of Interface States in Metal/Semiconductor Contacts.- VOptical and Vibrational Properties of Interfaces.- Optical Properties of Surfaces and Interfaces.- Vibrational Properties at Semiconductor Surfaces and Interfaces.- Raman Scattering from Interface Regions: Structure, Composition and Electronic Properties.- VI Interfaces: Present Status and Perspectives.- Role of Interfaces in Semiconductor Heterostructures.- The Physics of Metal Base Transistors.- Perspectives on Formation and Properties of Semiconductor Interfaces.- Index of Contributors.