In Physical and Technical Problems of SOI Structures and Devices, specialists in silicon-on-insulator technology from both East and West meet for the first time, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterisation, device and circuit issues.

Klappentext

In Physical and Technical Problems of SOI Structures and Devices, specialists in silicon-on-insulator technology from both East and West meet for the first time, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterisation, device and circuit issues.

Zusammenfassung
In this text, specialists in silicon-on-insulator technology from both East and West meet, giving the reader the chance to become acquainted with work from the former Soviet Union. It covers areas such as SOI materials and devices, characterization, device and circuit issues.

Inhalt

Preface. Contributors. SOI materials: Low dose SIMOX for ULSI applications; A.J. Auberton-Hervé, et al. Why porous silicon for SOI? V.P. Bondarenko, A.M. Dorofeev. Defect engineering in SOI films prepared by zone-melting recrystallization; E.I. Givargizov, et al. Ion beam processing for SOI; W. Skorupa. Semi-insulating oxygen-doped silicon by low temperature chemical vapor deposition for SOI applications; J.C. Sturm, et al. Direct formation of thin film nitride structures by high intensity ion implantation of nitrogen into silicon; R. Yankov, F. Komarov. Stimulated technology for implanted SOI formation; V.G. Litovchenko, et al. Behaviour of oxygen and nitrogen atoms sequentially implanted into silicon; A.B. Danilin. SOI fabrication by silicon wafer bonding with the help of glass-layer fusion; N.I. Koshelev, et al. Crystallization of a-Si films on glasses by multipulse- excimer-laser technique; A.B. Limanov. Microzone laser recrystallized polysilicon layers on insulator; A.A. Druzhinin, et al. SOI materials characterization techniques: Electrical characterization techniques for SOI materials and devices; S. Christoloveanu. The defect structure of buried oxide layers in SIMOX and BESOI structures; A.G. Revesz, H.L. Hughes. IR study of buried layer structure on different stages of technology; V.G. Litovchenko, et al. Optical investigation of silicon implanted with high doses of oxygen and hydrogen ions; P.A. Aleksandrov, et al. Electrical properties of ZMR SOI structures: characterization techniques and experimental results; T.E. Rudenko et al. SOI Devices: Fabrication and characterisation of poly-Si TFTs on glass; S.D. Brotherton, et al. Hot carrier reliability of SOI structures; D.E. Ioannou. Novel TESC bipolar transistor approach for a thin-film SOI substrate; C.J. Patel, et al. Problems of radiation hardness of SOI structures and devices; A.N. Nazarov. Fabrication of SIMOX structures and ICs test elements; G.G. Voronin, et al. Low-frequency noise characterization of SOI depletion-mode p- MOSFETS; N.B. Lukyanchikova, et al. SOI circuits: SOI devices and circuits: an overview of potentials and problems; J.-P. Colinge. 1.2 &mgr; CMOS/SOI on porous silicon; V.P. Bondarenko, et al. SOI pressure sensors based on laser recrystallized polysilicon; V.A. Voronin, et al. Index.