Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.

First comprehensive review of intrinsic point defects and impurities in silicon Compiles all known information about structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior of intrinsic point defects, acceptor and donor impurities, isovalent impurities, chalcogens, and halogens

Autorentext
Peter Pichler, Dr., geb. 1980, Studium der Geschichte, Philosophie und Medien in Graz und Mainz. Lektor am Institut für Geschichte der Karl-Franzens-Universität Graz, seit 2004 Mitarbeiter am Institut für Österreichische Rechtsgeschichte und Europäische Rechtsentwicklung ebenda. Veröffentlichungen zur Geschichte der europäischen Integration, zur Geschichte der europäischen Identität sowie zur österreichischen Geschichte.

Inhalt
Fundamental Concepts.- 1.1 Silicon and Its Imperfections.- 1.2 The Electron System.- 1.3 Phenomenological and Atomistic Approaches to Diffusion.- 1.4 Thermodynamics.- 1.5 Reaction Kinetics.- 1.6 Exchange of Matter Between Phases.- 2 Intrinsic Point Defects.- 2.1 Concentration in Thermal Equilibrium.- 2.2 Diffusion of Intrinsic Point Defects.- 2.3 Self-Diffusion and Tracer Diffusion.- 2.4 Vacancies.- 2.5 Self-Interstitials.- 2.6 Frenkel Pairs.- 2.7 Bulk Recombination and Bulk Processes.- 2.8 Surface Recombination and Surface Processes.- 2.9 Initial Conditions.- 3 Impurity Diffusion in Silicon.- 3.1 Basic Mechanisms.- 3.2 Impurity-Point-Defect Pairs.- 3.3 Diffusion of Substitutional Impurities via Mobile Complexes with Intrinsic Point Defects.- 3.4 Pair-Diffusion Models.- 3.5 Frank-Turnbull Mechanism.- 3.6 Kick-Out Mechanism.- 4 Isovalent Impurities.- 4.1 Carbon.- 4.2 Germanium.- 4.3 Tin.- 5 Dopants.- 5.1 Dopant Clusters.- 5.2 Ion Pairing.- 5.3 Boron.- 5.4 Aluminum.- 5.5 Gallium.- 5.6 Indium.- 5.7 Nitrogen.- 5.8 Phosphorus.- 5.9 Arsenic.- 5.10 Antimony.- 6 Chalcogens.- 6.1 Oxygen.- 6.2 Sulfur.- 6.3 Selenium.- 6.4 Tellurium.- 7 Halogens.- 7.1 Fluorine.- 7.2 Chlorine.- 7.3 Bromine.- List of Tables.- List of Figures.