The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion.
It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.

Up-to-date overview Includes supplementary material: sn.pub/extras

Inhalt
Basics of MBE growth.- Doping and impurity segregation effects in MBE.- Influence of strain in the epitaxial film on surface-phase equilibria.- IIVI materials.- Conclusion.