The 5th Edition of this foundational textbook offers a comprehensive update on the principles and phenomena governing semiconductor physics and materials science, with a focus on contemporary research and advancements. Building on the success of previous editions, this book introduces essential concepts while incorporating cutting-edge topics and expanded discussions to reflect the latest developments in the field.

Volume I features detailed analyses of generalized LST relations for all crystal systems, discusses the role of epitaxial strain in material performance, and presents insights into irreducible Brillouin zones. New content highlights the significance of interface thermal conductivity, with GaN/diamond systems serving as a prime example, and explores diffusion mechanisms such as the Frank-Turnbull and kick-out models. Updated chapters provide simplified formulas for carrier statistics and discussions on two-band conduction in the valence band.

The volume also introduces advanced topics, including exciton binding energy in Si and Ge, the experimental application of ABC recombination models, and emerging materials. Enhanced references, such as Vegard's Law and pioneering studies like R.C. Jones' seminal work, offer a rich foundation for further exploration.

This updated edition is indispensable for students, researchers, and professionals seeking a robust introduction to semiconductor physics and materials science. Its integration of classical principles with contemporary advancements ensures it remains a definitive resource for both learning and reference.

Provides a thorough introduction to semiconductor physics and materials science, ideal for students and professionals Explores advanced materials such as Heusler semiconductors, Mott insulators, and GaN/diamond systems Features detailed discussions on interface thermal conductivity, diffusion mechanisms, and ABC recombination models

Autorentext

Prof. Dr. Marius Grundmann studied physics at the Technical University of Berlin, earning his doctoral degree in 1991 on the topic of heteroepitaxial growth of indium phosphide on silicon. Since then, he has worked extensively in the area of epitaxy and characterization of electronic and optical properties of semiconductor heterostructures and nanostructures. Since 2000 he has been Professor of experimental physics at the University of Leipzig and, since 2002, Director of the Felix Bloch Institute for Solid State Physics. Grundmann has been actively involved either as spokesman or coordinator in numerous international research projects. He has currently authored or co-authored over 600 peer-reviewed publications and 3 textbooks, having together over 35,000 citations.

Inhalt

Part I.- Fundamentals.- Bonds.- Crystals.- Structural Defects.- Mechanical Properties.- Band Structure.- Electronic Defect States.- Transport.- Optical Properties.- Recombination.