This monograph investigates photoemission from optoelectronic materials and their nanostructures. It contains open-ended research problems which form an integral part of the text and are useful for graduate courses as well as aspiring Ph.D.'s and researchers.

In recent years, with the advent of fine line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimental techniques, low dimensional structures having quantum confinement in one, two and three dimensions (such as ultrathin films, inversion layers, accumulation layers, quantum well superlattices, quantum well wires, quantum wires superlattices, magneto-size quantizations, and quantum dots) have attracted much attention not only for their potential in uncovering new phenomena in nanoscience and technology, but also for their interesting applications in the areas of quantum effect devices. In ultrathin films, the restriction of the motion of the carriers in the direction normal to the film leads to the quantum size effect and such systems find extensive applications in quantum well lasers, field effect transistors, high speed digital networks and also in other quantum effect devices. In quantum well wires, the carriers are quantized in two transverse directions and only one-dimensional motion of the carriers is allowed.

First book devoted totally to photoemission from optoelectronic materials and their nanostructures Many open research problems are included in the book. (Each chapter from 4 to 13 has open research problems) New research has been included on studies in transport of modern semiconductor devices Includes supplementary material: sn.pub/extras

Autorentext

Prof. Dr. Eng. Kamakhya Prasad Ghatak is the first recipient of the degree of Doctor of Engineering of Jadavpur University in 1991 since the University inception in 1955. He is the principal co-author of more than 250 scientific research papers in international peer reviewed journals and the said five research monographs. He is the invited speaker of SPIE, MRS etc. and is the supervisor of more than two dozens of PhD candidates. His teaching interests are non-linear circuit theory, electron transport and nonlinear mechanics. His present research interests are nano science and technology besides number theory. Dr. Sitangshu Bhattacharya obtained his M.Sc. and PhD degrees in 2003 and 2009 respectively. He is the co-author of more than 50 scientific research papers in electro-thermal transport phenomena in semiconductor nanostructures in international peer reviewed journals and five research monographs among them, three from Springer series in Materials Science (Vols. 116,137 and 167), one from Springer Series in Nanostructure Science and Technology and one from Springer series in Solid-State Sciences (Vol. 170) respectively. His present research interest is in electro-thermal management in quantum effect devices and interconnects.

Klappentext

Photoemission from Optoelectronic Materials and Their Nanostructures is the first monograph to investigate the photoemission from low-dimensional nonlinear optical, III-V, II-VI, GaP, Ge, PtSb 2 , zero-gap, stressed, bismuth, carbon nanotubes, GaSb, IV-VI, Pb 1-x Ge x Te, graphite, Te, II-V, ZnP 2 , CdP 2 , Bi 2 Te 3 , Sb, and IV-VI materials. The investigation leads to a discussion of III-V, II-VI, IV-VI and HgTe/CdTe quantum confined superlattices, and superlattices of optoelectronic materials. Photo-excitation changes the band structure of optoelectronic compounds in fundamental ways, which has been incorporated into the analysis of photoemission from macro- and micro-structures of these materials on the basis of newly formulated electron dispersion laws that control the studies of quantum effect devices in the presence of light. The importance of the measurement of band gap in optoelectronic materials in the presence of external photo-excitation has been discussed from this perspective. This monograph contains 125 open-ended research problems which form an integral part of the text and are useful for graduate courses on modern optoelectronics in addition to aspiring Ph.D.'s and researchers in the fields of materials science, computational and theoretical nano-science and -technology, semiconductor optoelectronics, quantized-structures, semiconductor physics and condensed matter physics.

Inhalt
Fundamentals of Photoemission from Wide Gap Materials.- Fundamentals of Photoemission from Quantum Wells in Ultrathin Films and Quantum Well Wires of Various Nonparabolic Materials.- Fundamentals of Photoemission from Quantum Dots of Various Nonparabolic Materials.- Photoemission from Quantum Confined Semiconductor Superlattices.- Photoemission from Bulk Optoelectronic Materials.- Photoemission under Quantizing Magnetic Field from Optoelectronic Materials.- Photoemission from Quantum Wells in Ultrathin Films, Quantum Wires, and Dots of Optoelectronic Materials.- Photoemission from Quantum Confined Effective Mass Superlattices of Optoelectronic Materials.- Photoemission from Quantum Confined Superlattices of Optoelectronic Materials with Graded Interfaces.- Review of Experimental Results.- Conclusion and Future Research.