This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.

Presents measurements of band gap in heavily doped optoelectronic materials under intense electric fields and strong external photo excitation Contains 200 open research problems useful for graduate students and researchers Covers a wide range of technologically important electronic compounds Includes supplementary material: sn.pub/extras

Autorentext

Prof. Dr. Eng. Kamakhya Prasad Ghatak is the first recipient of the degree of Doctor of Engineering of Jadavpur University in 1991 since the University inception in 1955. He is the principal co-author of more than 250 scientific research papers in international peer reviewed journals and the said five research monographs. He is the invited speaker of SPIE, MRS etc. and is the supervisor of more than two dozens of PhD candidates. His teaching interests are non-linear circuit theory, electron transport and nonlinear mechanics. His present research interests are nano science and technology besides number theory. Dr. Sitangshu Bhattacharya obtained his M.Sc. and PhD degrees in 2003 and 2009 respectively. He is the co-author of more than 50 scientific research papers in electro-thermal transport phenomena in semiconductor nanostructures in international peer reviewed journals and five research monographs among them, three from Springer series in Materials Science (Vols. 116,137 and 167), one from Springer Series in Nanostructure Science and Technology and one from Springer series in Solid-State Sciences (Vol. 170) respectively. His present research interest is in electro-thermal management in quantum effect devices and interconnects.

Inhalt
From the Contents: The DR in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors.- The DR in Nano-Wires (NWs) of Heavily Doped (HD) Non-Parabolic Semiconductors.- The DR in Quantum Box (QB) of Heavily Doped (HD) Non-Parabolic Semiconductors.- The DR in doping superlattices of HD Non-Parabolic Semiconductors.- The DR in Accumulation and Inversion Layers of Non-Parabolic Semiconductors.