This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.

Details how charge trapping can occur on nanoparticles and at interface between bulk metal and metal nanoparticles Explains how charge transfer can lead to resistive switches Demonstrates how conductive filaments are formed and cause resistive switches Describe how devices with resistive switches can be used as memory devices Provides a comprehensive overview of nanoparticles, donor-acceptor materials, oxides, one- and two-dimensional nanomaterials for the fabrication and characterization of memory devices and mechanisms for resistive switches

Autorentext

Jianyong Ouyang is an Associate Professor in the Department of Materials Science and Engineering at National University of Singapore.

Klappentext

Inhalt
Introduction to history of memory devices and the present memory devices.- Introduction of resistive switches memory devices with nanoparticles.- Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode.- Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode.- Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles.- Mechanisms for resistive switches.- Application of the resistive switching devices with nanoparticles.