The book gives a comprehensive introduction to the field by an established expert on ferroelectric memories

State-of-the-art device designs are illustrated among the book's many figures. More than 500 up-to-date references and 76 problems for students make the book useful both as a research reference and as a text for graduate or advanced undergraduate students. This book is the only single-authored one in the field, all the other are edited collections of papers.

Inhalt

1. Introduction.- 2. Basic Properties of RAMs (Random Access Memories).- 3. Electrical Breakdown (DRAMs and NV-RAMs).- 4. Leakage Currents.- 5. CapacitanceVoltage Data: C(V).- 6. Switching Kinetics.- 7. Charge Injection and Fatigue.- 8. Frequency Dependence.- 9. Phase Sequences in Processing.- 10. SBT-Family Aurivillius-Phase Layer Structures.- 11. Deposition and Processing.- 12. Nondestructive Read-Out Devices.- 13. Ferroelectrics-on-Superconductor Devices: Phased-Array Radar and 10100 GHz Devices.- 14. Wafer Bonding.- 15. Electron-Emission and Flat-Panel Displays.- 16. Optical Devices.- 17. Nanophase Devices.- 18. Drawbacks and Disadvantages.- A. Exercises.