The Workshop Heterostructure Epitaxy and Devices HEAD'97 was held from October 12 to 16, 1997 at Smolenice Castle, the House of Scientists of the Slovak Academy of Sciences and was co-organized by the Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and the Institute of Thin Film and Ion Technology, Research Centre, liilich. It was the third in a series of workshops devoted to topics related to heterostructure epitaxy and devices and the second included into the category of Advanced Research Workshops (ARW) under sponsorship of the NATO. More than 70 participants from 15 countries attended (Austria, Belarus, Belgium, Czech Republic, Finland, Germany, Greece, Hungary, Italy, Poland, Russia, Slovakia, Ukraine, the United Kingdom and the USA). Novel microelectronic and optoelectronic devices are based on semiconductor heterostructures. The goal of the ARW HEAD'97 was to discuss various questions related to the use of new materials (e.g. compound semiconductors based on high band-gap nitrides and low band-gap antimonides) and new procedures (low-temperature epitaxial growth), as well as new principles (nanostructures, quantum wires and dots, etc.) aimed at realizing high-performance heterostructure based electronic devices. Almost 70 papers (invited and contributed oral presentations as well as posters) were presented at the ARW HEAD'97 and the main part of them is included into these Proceedings.

Zusammenfassung
Proceedings of the NATO Advanced Research Workshop, Smolenice Castle, Slovakia, October 12-16, 1997

Inhalt
Preface. Section I: Physics and Technology. Physics and Technology of Semiconductor Nanostructures; H. Lüth. Molecular Beam Epitaxy: Physics and Technology; M. Henini. 6H-SiC(001)/AlN/GaN Epitaxial Heterojunctions and Their Valence Band Offset; A. Rizzi. Optical Properties of Antimonide Based Heterostructures Grown by All-Organometallic Vapour Phase Epitaxy; T. Tuomi. MOVPE Technology for Multiwafer Production: Ga-Al-In-N Heterostructures and Optical and Electrical Properties of Deposited Layers; M. Deschler, et al. Molecular Beam Epitaxy of Narrow-Gap III-V Antimonides for Infrared Detectors and Sources; G. Borghs, et al. The Stability of the Misfit Dislocation Array at the Substrate-Epitaxial Layer Interface; E. Dobrocka, et al. Surface Reconstruction Processes in the Scope of the BCF Theory of Crystal Growth; D. Nohavica. Influence of Si Doping on Epitaxial Lateral Overgrowth of GaAs; Z.R. Zytkiewicz, D. Dobosz. Temperature Dependent Quasiplateaux of Hall Effect in Multi-delta-Layers; J.J. Mares, et al. Self-Consistent Analysis of Electronic Structure of Coupled delta-Doped Layers in GaAs; J. Osvald, E. Burian. Semiquantal Dynamics of Electrons in Quantum Heterostructures; L.V. Yurchenko, V.B. Yurchenko. Phase-Shift Analysis of Two-Dimensional Carrier-Carrier Scattering; A. Mosková, M. Mosko. Carrier-Impurity Collisions in a Narrow Quantum Wire: Born Approximation Versus Exact Solution; P. Vágner, M. Mosko. Low Temperature Hydride Vapor Phase Epitaxy of GaN Layers on Different Substrates; R. Fornari, et al. Study of Gallium Nitride Films Grown by MOCVD; R. Paszkiewicz, et al. A Comparison of Galvanomagnetic Properties of GaN Epitaxial Layers Grown on Silicon and Sapphire Substrates; K. Somogyi, Yu.V. Zhilyaev. The Effectof theSubstrate Thermal Stresses on the Misfit Dislocation Generation; E. Dobročka. Experimental Study of the Thermal Decomposition of Heteroepitaxial and Bulk InP; F. Riesz, et al. Antiphase Boundaries in the Ordered InGaP Epitaxial Layers Prepared by MOCVD; M. Harvanka, et al. Critical Thickness Investigation of InxGa1-xAs/GaAs by X-Ray Measurements; M. Tlaczala, et al. MOVPE Growth of InGaP/GaAs Interfaces; R. Kúdela, et al. GaAs and InP on Si with InGaP Buffer Layers; H.-H. Wehmann, et al. Crystal Structure and Photoluminescence of In1-xGaxAs Heteroepitaxial Layers Grown on InP Substrates; V.A. Bykovsky, et al. Investigation of InxGa1-xAs/GaAs Heterostructures by Electrochemical Method; A. Nemcsics, L. Dobos. Technological and Physical Aspects of the Improvement of Uniformity of Pure and Lightly Doped GaAs Epitaxial Layers; V.A. Bykovsky, et al. Characterization of InP Layers Prepared by LPE Using Ytterbium and Erbium Admixture; O. Procházková, et al. Characterization of InP:Zn Layers by Photoluminescence and Photo-Electrochemical C-V Profiling; V.F. Andrievski, et al. Spectroscopic Ellipsometry: Application to Complex Optoelectronic Layer Systems; B. Rheinlánder, et al. Section II: Heterostructures and Devices. InGaP/GaAs Carbon-Doped Heterostructures for Heterojunction Bipolar Transistors; Q.J. Hartmann, et al. InxGa1-xP Quantum Wire Structures Grown by MOVPE Technique; J. Novák. Low-Temperature Grown Molecular-Beam Epitaxial GaAs for Terahertz Photomixing; P. Kordo. InP-HEMT-Based Digital Circuit Technology; I. Adesida, A. Mahajan. Layers and Heterostructures for High