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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

  • Kartonierter Einband
  • 520 Seiten
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Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an... Weiterlesen
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Beschreibung

Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science. Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Inhalt
Preface. Introduction. 1. Recent Advances in Experimental Studies of SiO2 Films on Si. 2. Theory of the SiO2/Si and SiOxNy/Si Systems. 3. Growth Mechanism, Processing, and Analysis of (Oxy)nitridation. 4. Initial Oxidation and Surface Science Issues. 5. Electrical Properties and Microscopic Models of Defects. 6. Hydrogen/Deuterium Issues. 7. New Substrates (SiC, SiGe) and SOI Technologies. Appendix. Authors Index. List of Workshop Participants.

Produktinformationen

Titel: Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
Editor:
EAN: 9780792350088
ISBN: 0792350081
Format: Kartonierter Einband
Herausgeber: Springer Netherlands
Genre: Elektrotechnik
Anzahl Seiten: 520
Gewicht: 779g
Größe: H235mm x B155mm x T27mm
Jahr: 1998
Auflage: Softcover reprint of the original 1st ed. 1998

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