This book deals with an important basic technology in microelectronics. It discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.

This is the only book that addresses fundamental issues in silicon oxidation at a level that will remain useful for 10-20 years Because it combines both state-of-the-art experimental approaches and theoretical methods it should become a reference book for anyone interested in studying insulators on semiconductor substrates, such as people in opto-electronics and microelectronics Includes supplementary material: sn.pub/extras

Klappentext
This book presents fundamental experimental and theoretical developments relating to silicon oxidation for ultra-thin gate oxide formation. Starting with elementary processes taking place during wet chemical cleans prior to oxidation, the focus is then placed on the incorporation of oxygen into the silicon crystal for H-passivated, clean and oxidized silicon surfaces, including oxygen diffusion and defect formation. Experimental methods include scanning tunneling microscopy, x-ray photoelectron and infrared absorption spectroscopies, ion scattering and transmission electron microscopy. Most of the theoretical contributions are based on first-principles calculations, ranging from cluster calculations to supercell and slab calculations. Phenomenological modeling of oxidation is also discussed. The material presented here will enable the reader to gain a deeper understanding of silicon oxidation and ultra-thin oxide formation (and the processes that affect the morphology of silicon oxides).

Inhalt
1 Introduction.- 1.1 The Silicon MOSFET.- 1.2 Surface States and the Early Discoveries.- 1.3 New Technologies.- 1.4 Silicon Dioxide Growth.- 1.5 Microstructure of the Interface.- References.- 2 Morphological Aspects of Silicon Oxidation in Aqueous Solutions.- 2.1 Introduction.- 2.2 Reaction Anisotropy and the Control of Atomic-Scale Morphology.- 2.3 Extreme Anisotropy: NH4F Etching of Si(111).- 2.4 Controlling Anisotropy: The Curious Effects of Isopropanol.- 2.5 Correlated Reactions and the Development of Mesoscale Morphologies.- 2.6 Correlated Etching: The Surprising Role of Etch Pits.- 2.7 Kinetic Structures and the Development of Etch Hillocks.- 2.8 Using Micromachined Patterns to Study Surface Chemistry.- 2.9 Conclusions and Outlook.- References.- 3 Structural Evolution of the Silicon/Oxide Interface During Passive and Active Oxidation.- 3.1 Introduction.- 3.2 Passive and Active Oxidation in situ in the TEM.- 3.3 Passive Oxidation as a Layer-by-Layer Process.- 3.4 Active Oxidation as a Step-Flow Process.- 3.5 Control of Surface Morphology During Device Processing.- 3.6 Electron Beam Effects During in situ Electron Microscopy.- 3.7 Conclusions.- References.- 4 Oxidation of H-Terminated Silicon.- 4.1 Introduction.- 4.2 Experimental and Analytical Details.- 4.3 Initial Stage of Oxidation of H-Terminated Si Surfaces.- 4.4 Layer-by-Layer Oxidation Reaction at the Interface.- 4.5 Oxidation-Induced Roughness of Oxide Surfaces.- 4.6 Valence Band Discontinuities at and near the Si02/Si Interface.- 4.7 Summary and Future Directions.- References.- 5 Layer-by-Layer Oxidation of Si(001) Surfaces.- 5.1 Introduction.- 5.2 Experimental Details.- 5.3 SREM Observation of the Initial Oxidation of Si(001)-2 x 1 Surfaces.- 5.4 Mechanism of Layer-by-Layer Oxidation.- 5.5 Kinetics of Initial Layer-by-Layer Oxidation.- 5.6 Furnace Oxidation at High Temperature.- 5.7 Summary.- References.- 6 Atomic Dynamics During Silicon Oxidation.- 6.1 Introduction.- 6.2 Theoretical Approach.- 6.3 Atomic Processes During Oxidation.- 6.4 Model Structure of Si(001)-SiO2 Interface.- 6.5 Model of Oxidation.- 6.6 Discussion and Conclusion.- References.- 7 First-Principles Quantum Chemical Investigations of Silicon Oxidation.- 7.1 Introduction.- 7.2 Theoretical Approach.- 7.3 Water-Induced Oxidation of Si(100)-(2 x 1).- 7.4 Conclusions.- References.- 8 Vibrational Studies of Ultra-Thin Oxides and Initial Silicon Oxidation.- 8.1 Introduction.- 8.2 Scientific Challenges.- 8.3 Nature of Ultra-Thin Silicon Oxides and Si/SiO2 Interface.- 8.4 Water Oxidation of Si(100)-(2 x 1).- 8.5 Conclusions.- References.- 9 Ion Beam Studies of Silicon Oxidation and Oxynitridation.- 9.1 Introduction.- 9.2 Experimental Techniques.- 9.3 Silicon Oxidation.- 9.4 Silicon Oxynitridation.- 9.5 Hydrogen in Ultrathin SiO2 Films.- References.- 10 Local and Global Bonding at the Si-SiO2 Interface.- 10.1 Introduction.- 10.2 The Oxidation Process and Local Bonding Arrangements.- 10.3 Global Bonding at the Interface.- 10.4 Z-Contrast Microscopy.- 10.5 Electron Energy Loss Spectroscopy.- References.- 11 Evolution of the Interfacial Electronic Structure During Thermal Oxidation.- 11.1 Introduction.- 11.2 Image Formation in STEM.- 11.3 Measuring Interface Roughness and Oxide Thickness.- 11.4 Mapping Interface States with EELS.- 11.5 Comparing Electronic Structure Calculations and EELS.- 11.6 Evolution of the Local Electronic Structure.- 11.7 Conclusions.- References.- 12 Structure and Energetics of the Interface Between Si and Amorphous SiO2.- 12.1 Introduction.- 12.2 Method.- 12.3 Calculation and Results.- 12.4Discussion.- 12.5 Conclusion.- References.