The discovery of the Giant Magnetoresistance Effect revolutionized the magnetic storaging technology. This book gives insight into the potential and application of this effect. The book appeals to materials researchers, physicists, engineers and advanced students.

First application-oriented book on this topic

Klappentext
This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.

Inhalt
1 Introduction.- 2 Physics of GMR and TMR Devices.- 3 GMR Devices of Metallic Multilayers.- 4 Spin-Valve Devices.- 5 Tunnel-Type GMR (TMR) Devices.- 6 Magnetic Random Access Memory (MRAM).- 7 Other GMR Devices.