Introduces a material suitable for semiconductor spin electronics devices Presents a Heisenberg magnet and the model of Vonsovsky

Discusses spin polarization of charge carriers

Introduces a material suitable for semiconductor spin electronics devices Presents a Heisenberg magnet and the model of Vonsovsky Discusses spin polarization of charge carriers

Autorentext
Arnold S. Borukhovich obtained his doctorate in physics and mathematics in 1989. The second doctor degree in physics and mathematics he received in 1989 at the Institute of Ural Branch of Russian Academy of Sciences with a work Thermodynamic peculiarities and phases transitions at the magnetic semiconductors based on 3d and 4f metals. In 1997 he became professor at the Russian State Vocational Pedagogical University, Yekaterinburg. His research interests concern: physics of variable composition phases, physics of magnets and magnetic phase transitions,physics and chemistry of the magnetic semiconductors, semiconductor spintronics, weak superconductivity and tunnel junctions.

Inhalt
Introduction.- PART I. EuO - ferromagnetic and semiconductor.- Features of formation of electron band structure and physical properties of ferromagnetic semiconductor EuO.- Methods of synthesis of europium monoxide.- Raising the Curie temperature of the ferromagnetic semiconductor EuO.- PART II. EuO as a spintronics.- Theoretical background of the Josephson effect in superconducting tunnel junctions with ferromagnetic barrier.- Creating and study of the properties of multilayers and superconducting tunnel junctions with EuO.- Creating, research and application of heterostructures metal / ferromagnetic semiconductor (EuO) and ferromagnetic semiconductor (EuO)/semiconductor.- Creating a high-spin injector based EuO.- Conclusion.<p