Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces to the general aspects of space-charge layers, of clean-surface and adatom-induced surface states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts and models. Where available, resutls of more refined calculations are considered. A final chapter is devoted to the band lineup at semiconductor interfaces.

Inhalt

1. Introduction.- 2. Surface Space-Charge Region in Thermal Equilibrium.- 3. Surface States.- 4. Occupation of Surface States and Surface Band-Bending in Thermal Equilibrium.- 5. Surface Space-Charge Region in Non-Equilibrium.- 6. Interface States.- 7. Cleaved {110} Surfaces of III-V and II-VI Compound Semiconductors.- 8. {100} Surfaces of III-V, II-VI, and I-VII Compound Semiconductors with Zincblende Structure.- 9. {100} Surfaces of Silicon, Germanium, and Cubic Silicon Carbide.- 10. Cleaved Silicon and Germanium {111} Surfaces.- 11. Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces.- 12. Phase Transitions on Silicon and Germanium {111} Surfaces.- 13. {111} Surfaces of Compounds with Zincblende Structure.- 14. Monovalent Adatoms.- 15. Group-III Adatoms on Silicon Surfaces.- 16. Group-V Adatoms.- 17. Oxidation of Silicon and III-V Compound Semiconductors.- 18. Surface Passivation by Adsorbates and Surfactants.- 19. Semiconductor Interfaces.- References.- Index of Reconstructions and Adsorbates.