The book gives a comprehensive presentation and analysis of properties and methods of formation of semiconducting silicides
Fundamental electronic, optical and transport properties of the silicides collected from recent publications will help the reader to make a choice for their application in new generations of solid-state devices
A comprehensive presentation of thermodynamic and kinetic data is given in combination with their technical application
Information on corresponding thin-film or bulk crystal formation techniques is provided

Inhalt

1 General Material Aspects.- 1.1 Crystalline Structure and Mechanical Properties.- 1.2 Thermodynamics of Silicidation.- 1.3 Kinetics of Silicidation.- 1.4 Thermal Oxidation of Silicides.- 2 Thin Film Silicide Formation.- 2.1 Silicides and Silicon Epitaxial Relationships.- 2.2 Diffusion Synthesis.- 2.3 Ion Beam Synthesis.- 2.4 Atomic and Molecular Deposition.- 2.5 General Comments on Silicide Formation Techniques.- 3 Crystal Growth.- 3.1 Methods of Crystal Growth and Material Problems.- 3.2 Crystal Growth by Chemical Vapor Transport Reactions.- 3.3 Crystal Growth from the Flux.- 3.4 Crystal Growth from the Melt.- 3.5 Summary.- 4 Fundamental Electronic and Optical Properties.- 4.1 Basic Relationships.- 4.2 Electronic Band Structure.- 4.3 Interband Optical Spectra.- 4.4 Light Emission.- 4.5 Infrared Optical Response and Raman Scattering.- 4.6 Concluding Remarks.- 5 Transport Properties.- 5.1 Free Charge Carriers and Their Mobility in Semiconductors.- 5.2 Experimental Resistivities.- 5.3 Mobility of Charge Carriers.- 5.4 Thermoelectric Properties.- 5.5 Concluding Remarks.- References.