Secondary Ion Mass Spectrometry SIMS V

Inhalt

I Retrospective.- The Growth of Secondary Ion Mass Spectrometry (SIMS): A Personal View of Its Development.- II Fundamentals.- Density-Functional Studies of the Atom-Surface Interaction and the Ionization Probability of Sputtered Atoms.- Origin of the Chemical Enhancement of Positive Secondary Ion Yield in SIMS.- Ion Pair Production as Main Process of SIMS for Inorganic Solids.- Sputtering and Secondary Ion Emission From Metals and Alloys Subjected to Oxygen Ion Bombardment.- Measurements of the SIMS Isotope Effect.- SIMS Study of Self-Diffusion in Liquid Tin and of Associated Isotope Effects.- Silicon-Induced Enhancement of Secondary Ion Emission in Silicates: A Study of the Matrix Effects.- Ionization Probabilities of Polycrystalline Metal Surfaces.- Reactivity and Structure of Sputtered Species.- Local Thermal Equilibrium Model of Molecular Secondary Ion Emission.- Time-of-Flight Investigations of Secondary Ion Emission from Metal Halides.- Multicharged Secondary Ions from Light Metals (Mg, Al, Si).- Population of Ion Clusters Sputtered from Metallic Elements with 10 keV Ar+.- Ejection and Ionization Efficiencies in Electron and Ion-Stimulated Desorption from Covalently Bound Surface Structures.- III Symposium: Detection of Sputtered Neutrals.- Electron Gas SNMS.- Glow Discharge Mass Spectrometry.- Electron Beam Postionization of Sputtered Neutrals.- General Postionization of Sputtered and Desorbed Species by Intense Untuned Radiation.- Multi-Photon Resonance Ionization of Emitted Particles.- Post-Ionization of Sputtered Particles: A Brief Review.- Quantitative Analysis Using Sputtered Neutrals in an Ion Microanalyser.- Quantitative Analysis of Iron and Steel by Mass Spectrometry.- Ion Microprobe Mass Spectrometry Using Sputtering Atomization and Resonance Ionization.- IV Detection Limits and Quantification.- Memory Effects in Quadrupole SIMS.- Correction for Residual Gas Background in SIMS Analysis.- Cross-Calibration of SIMS Instruments for Analysis of Metals and Semiconductors.- On-Line Ion Implantation: The SIMS Primary Ion Beam for Creation of Empirical Quantification Standards.- Matrix Effects in the Quantitative Elemental Analysis of Plastic-Embedded and Ashed Biological Tissue by SIMS.- Reproducible Quantitative SIMS Analysis of Semiconductors in the Cameca IMS 3F.- V Instrumentation.- Imaging SIMS at 20 nm Lateral Resolution: Exploratory Research Applications.- Use of a Compact Cs Gun Together with a Liquid Metal Ion Source for High Sensitivity Submicron SIMS.- Secondary Ion Mass Spectrometer with Liquid Metal Field Ion Source and Quadrupole Mass Analyzer.- Evaluation of a New Cesium Ion Source for SIMS.- Survey of Alkali Primary Ion Sources for SIMS.- Non-Oxygen Negative Primary Ion Beams for Oxygen Isotopic Analysis in Insulators.- A New SIMS Instrument: The Cameca IMS 4F.- The Emission Objective Lens Working as an Electron Mirror: Self Regulated Potential at the Surface of an Insulating Sample.- 20 K-Cryopanel-Equipped SIMS Instrument for Analysis Under Ultrahigh Vacuum.- Improvement of an Ion Microprobe Mass Analyzer (IMMA).- A High-Performance Analyzing System for SIMS.- Characterization of Electron Multipliers by Charge Distributions.- Automated Collection of SIMS Data with Energy Dispersive X-Ray Analysis Hardware.- Software and Interfaces for the Automatic Operation of a Quadrupole SIMS Instrument.- Computer-Aided Design of Primary and Secondary Ion Optics for a Quadrupole SIMS Instrument.- Time-of-Flight Instrumentation for Laser Desorption, Plasma Desorption and Liquid SIMS.- Coincidence Measurements with the Manitoba Time-of-Flight Mass Spectrometer.- High Resolution TOF Secondary Ion Mass Spectrometer.- VI Techniques Closely Related to SIMS.- Evaluation of Accelerator-based Secondary Ion Mass Spectrometry for the Ultra-trace Elemental Characterization of Bulk Silicon.- Quantitative Analysis with Laser Microprobe Mass Spectrometry.- Laser-Probe Microanalysis: Aspects of Quantification and Applications in Materials Science.- Some Aspects of Laser-Ionisation Mass-Analysis (LIMA) in Semiconductor Processing.- VII Combined Techniques and Surface Studies.- The Use of SSIMS and ISS to Examine Pt/TiO2 Surfaces.- Secondary Ion and Auger Electron Emission by Ar+ Ion Bombardment on Al-Fe Alloys.- Characterization of Planar Model Co-Mo / ?-Al2O3 Catalysts by SIMS, ESCA, and AES.- Search for SiO2 in Commercial SiC.- SIMS/XPS Studies of Surface Reactions on Rh(111) and Rh(331).- SSIMS - A Powerful Tool for the Characterisation of the Adsorbate State of CO on Metallic and Bimetallic Surfaces.- Energy and Angle-Resolved SIMS Studies of Cl2 Adsorption on Ag{110}; Evidence for Coverage Dependent Electronic Structure Rearrangements.- Molecular Secondary Ion Emission from Different Amino Acid Adsorption States on Metals.- VIII Ion Microscopy and Image Analysis.- A High-Resolution, Single Ion Sensitivity Video System for Secondary Ion Microscopy.- Dynamic Range Consideration for Digital Secondary Ion Image Depth Profiling.- Digital Slit Imaging for High-Resolution SIMS Depth Profiling.- Lateral Elemental Distributions on a Corroded Aluminum Alloy Surface.- Improved Spatial Resolution of the CAMECA IMS-3f Ion Microscope.- Video Tape System for Ion Imaging.- Application of a Framestore Datasystem in Imaging SIMS.- Chemical Characterisation of Insulating Materials Using High Spatial Resolution SSIMS - An Analysis of the Problems and Possible Solutions.- Application of Digital SIMS Imaging to Light Element and Trace Element Mapping.- SIMS Imaging of Silicon Defects.- IX Depth Profiling and Semiconductor Applications.- Quantitative SIMS Depth Profiling of Semiconductor Materials and Devices.- High-Accuracy Depth Profiling in Silicon to Refine SUPREM-III Coefficients for B, P, and As.- The Use of Silicon Structures with Rapid Doping Level Transitions to Explore the Limitations of SIMS Depth Profiling.- Temperature Dependent Broadening Effects in Oxygen SIMS Depth Profiling.- Sputter-Induced Segregation of As in Si During SIMS Depth Profiling.- SIMS Measurements of As at the SiO2/Si Interface.- Elimination of Ion-Bombardment Induced Artefacts in Compound Identification During Thin Film Analysis: Detection of Interface Carbides in "Diamond-Like" Carbon Films on Silicon.- Gibbsian Segregation During the Depth Profiling of Copper in Silicon.- Species-Specific Modification of Depth Resolution in Sputtering Depth Profiles by Oxygen Adsorption.- Selective Sputtering and Ion Beam Mixing Effects on SIMS Depth Profiles.- The Effect of Temperature on Beam-Induced Broadening in SIMS Depth Profiling.- Variable Angle SIMS.- Dependence of Sputter Induced Broadening on the Incident Angle of the Primary Ion Beam.- SIMS Depth Profiling with Oblique Primary Beam Incidence.- Deterioration of Depth Resolution in Sputter Depth Profiling by Raster Scanning an Ion Beam at Oblique Incidence and Constant Slew Rate.- SIMS Analysis of Contamination Due to Ion Implantation.- Analysis of Surface Contamination from Chemical Cleaning and Ion Implantation.- Quantification of SIMS Dopant Profiles in High-Dose Oxygen-Implanted Silicon, Using a Simple Two-Matrix Model.- Isotope Tracer Studies Using SIMS.- High Dynamic Range SIMS Depth Profiles for Aluminium in Silicon-on-Sapphire.- Charge Compensation During SIMS Depth Profiling of Multilayer Structures Containing Resistive and Insulating Layers.- Ion Deposition Effects in and Around Sputter Craters Formed by Cesium Primary Ions.- SIMS Depth Profiling of Si in GaAs.- High Purity III-V Compound Analyses by Modified CAMECA IMS 3F.- Depth Profiling of Dopants in Aluminum Gallium Arsenide.- Depth Resolution in Profiling of Thin GaAs-GaA1As Layers.- Elemental Quantification Through Thin Films and Interfaces.- Matrix Effect Quantification for Positive SIMS Depth Profiling of Dopants in InP/InGaAsP/InGaAs Epitaxial Heterostructures.- A Comparison of Electron-Gas SNMS, RBS and AES for the Quantitative Depth Profiling of Microsc…