This volume contains full proceedings of the Fourth International Conference on Secondary Ion Mass Spectrometry (SIMS-IV), held in the Minoo-Kanko Hotel, Osaka, Japan, from November 13th to 19th, 1983. Coordinated by a local or­ ganizing committee under the auspices of the international organizing com­ mittee, it followed earlier conferences held in MUnster (1977), Stanford (1979), and Budapest (1981). The conference was attended by about 250 participants from 18 countries, and 130 papers including 24 invited ones were presented. Reflecting the rap­ idly expanding activities in the SIMS field, informative papers were pre­ sented containing up-to-date information on SIMS and various related fields. The proceedings focussed upon six main issues: (1) Fundamentals of sput­ tering and secondary ion formation. (2) Recent progress in instrumentation, including submicron SIMS and image processing. (3) SIMS combined with other surface analysis techniques. (4) Outstanding SIMS-related analytical methods such as laser-microprobe SIMS, sputtered neutral mass spectrometry, mass spectrometry of sputtered neutrals by multi-photon resonance ionization, and accelerator-based SIMS. (5) Organic SIMS and FAB which has recently become a rapidly expanding technique in pharmacy, biotechnology, etc. (6) Appl ica­ tions of SIMS to various fields such as metallurgy, geology, and biology, including depth profiling of semiconductors, and analysis of inorganic mate­ rials. As a venue for the exchange of ideas and information concerning all the above issues, the conference proved a great success.

Inhalt

I Fundamentals.- Fundamentals of Sputtering..- Sputtered Atom Yields and Ionization Probabilities of Binary Alloys Under O2+ Bombardment..- Sputtering and Secondary Ion Yields of Ti-Al Alloys Subjected to Oxygen Ion Bombardment..- Outermost Surface Composition of Au-Cu Alloys Under Ion Bombardment of Different Current Densities of Ar+ Ions..- Secondary Dimer Ion Emission Probability in Sputtering Cu-Ni Alloy.- Empirical Formula for Sputtering Yield and Z2 Dependence of Its Q Values.- Molecular Dynamics Computer Simulation Investigation of Target Damage Created by Ion Bombardment..- Simulation of Ion Sputtering Process on the Binary Alloy.- Secondary Ion Emission from Si Subjected to Oxygen Ion Bombardment.- Surface Structure of Oxidized Metals Bombarded by Incident Ions.- The Effect of Energetic Electrons on the Secondary Ion Emission.- Influence of Alkali Metals on the Negative Secondary Ion Emission from Silicon..- Secondary Ion Emission Peculiarities at Metal Interfaces.- Intensities and Energy Spectra of Secondary Ions Sputtered from Fe-Al Alloys by Ar+ Ion Bombardment in Ultrahigh Vacuum.- CF3+: An Alternative Primary Beam Source for the Sensitive Detection of Electropositive Elements in SIMS..- Hydrogen Ion Bombardment in Secondary Ion Mass Spectrometry.- Electron Tunneling and the Emission of Secondary Ions from Silicon Surfaces.- Detection of Sputtered Neutrals by Multiphoton Resonance Ionization.- The Energy Dependence of the Ionisation Coefficient in SIMS.- Accurate Measurement of Energy Distribution Curves of Secondary Ions by UHV-IMMA..- Energy Distribution of Positive Secondary Ions from Pure Elements and Amorphous Alloys..- Energy Distribution of Secondary Ions Emitted from Silicate Minerals.- A Retarding-Accelerating Energy Analyser for SIMS..- II Quantification.- Current Status of Sputtered Ion Emission Models..- LTE Quantification of SIMS of Ni-Cr Alloy.- Simplified IMISR Method with Computer Data Acquisition..- Relative Sensitivity Factor of Compound Semiconductor by SIMS.- Quantitative Ion Probe Analysis of Oxidized Surface Using N2+ Primary Ion..- Oxygen Effect on Secondary Ion Yield in Oxygen-Doped Silicon.- The Role of Standards in Secondary Ion Mass Spectrometry.- SIMS Quantitative Analysis of Impurities in GaAs Using Multi-Element-Doped GaAs..- SIMS Quantitative Analysis of Gallium in Silicon by Using Ion-Implanted Samples for Standards..- III Instrumentation.- Ion Gun Systems for Submicron SIMS..- Submicron Ion Probes..- Optimization of High Brightness Cs Ion Source and Ion Optics for UHV-IMMA..- A New Type Surface Ionization Source with an Additional Mode of Electrohydrodynamic Ionization for SIMS..- A Study of Argon Ion Gun in SIMS..- Liquid Metal Ion Sources for Scanning SIMS.- SIMS with Very High Spatial Resolution Using Liquid Metal Ion Sources.- Development of High Performance Ion Microanalyzer..- MIQ-156 MARK II A Highly Advanced and Versatile Quadrupole SIMS Instrument, with Dual Primary Ion Source.- Development of Shielded Ion Microprobe Analyser for Irradiated Fast Reactor Fuel and Material Examination..- Parameters Influencing Ion Intensities for Quadrupole SIMS Instruments.- Isotopic Measurements at High Mass Resolution by Electrostatic Peak Switching..- Laser Microprobe Mass Spectrometry..- Metastable Molecular Ion Emission from Semiconductor Surfaces Under N2 Laser Irradiation..- Laser-Induced Sputtering from CdS and GaAs..- SIMS at Higher Energies..- The Radiocarbon Measurement with the Tandem Accelerator at Nagoya University..- Image Processing SIMS..- Evaluation of Metal Interaction by Color Display SIMS Technique.- A Comparison of Camera-Based and Quantized Detectors for Image Processing on an Ion Microscope..- Automation of an Ion Microprobe Mass Analyzer.- IV Combined and Static SIMS.- Ultra-High Vacuum SIMS: A Pilgrim's Journey Through History.- Single Crystal Surface Structure Studies with Static SIMS.- Ion Dose Effect in Thin Film Formation on Nb(100).- A Low-Energy SIMS Investigation on Thermal Diffusion on Vapor-Deposited Nickel on Copper Substrate.- SIMS Combined with Other Methods of Surface Analysis..- Combined SIMS and Electron Spectroscopy Investigation of the Chemical State of Some Ion-Implanted Transition Metals and Steels.- SIMS-Auger Analysis of Organic Films on Gallium Arsenide.- SIMS and AES Studies of Ni-Zn Alloys..- The Application of SIMS and other Surface Techniques to the Study of Antimony-Doped Tin oxide Surfaces..- Silver Catalyst for Partial oxidation of Methanol. Reaction Path and Catalyst Poisoning by Iron. A Combined SIMS, TDMS, AES, XPS and ISS Study..- Behavior of Inorganic Materials on Catalysts Used for Coal Liquefaction.- Quantitative Investigation of As Segregation at the SiO2/Si Interface by SIMS and RBS..- Low Energy Oxygen Ion Implantation and Ion-Bombardment Induced oxidation of Silicon, Studied by SIMS, AES and XPS.- The Effects of Ion Beam Sputtering on the Chemical State of Metal oxide Surfaces..- Combined Spectrometer with the Techniques of SIMS, ISS, AES and XPS.- V Application to Semiconductor and Depth Profiling.- The Use of SIMS for Semiconductor Processing Technology: The Influence of Oxygen at Depth Profiling..- Photon Radiation Annealing of Ion-Implanted Silicon.- Quantification of Silicon Wafer Cleaning Using Secondary Ion Mass Spectroscopy..- SIMS Study of Surface Contamination Due to Ion Implantation.- Quantitative Analysis of Amorphous Silicon Nitride Using SIMS.- The Contribution of SIMS to the Characterization of III-V Compounds.- Effects of Donor Impurities on the Redistribution of Mn Acceptors in In1?XGaXAs..- Residual Donor Impurities in Undoped LEC SI-GaAs Crystals.- Quantitative Depth Profile Analysis by Secondary Neutral Mass Spectrometry (SNMS)..- Practical Limitations in Depth Profiling of Low Energy Implants into Amorphised and Crystalline Silicon..- Depth Profiling of Dopant Distribution in Small Area Transistors.- Comparison of Oxygen and Indium Primary Ion Beams for SIMS-Depth Profiling..- Application of Computer-Controlled SIMS to Depth Profiling of Impurities Implanted in Silicon with High Dose of B+ or BF2+ Ions.- Improvements in the Routine Depth Profiling of Doping Elements.- Aspects of SIMS Evaluation of Tracer Diffusion and Its Isotope Effect..- High-Performance Depth Profiling with a Quadrupole-Based SIMS Instrument..- Depth Profiling of Evaporat…