Fundamentals of Solid State Engineering is structured in two major parts. It first addresses the basic physics concepts, which are at the base of solid state matter in general and semiconductors in particular. The second part reviews the technology for modern Solid State Engineering. This includes a review of compound semiconductor bulk and epitaxial thin films growth techniques, followed by a description of current semiconductor device processing and nano-fabrication technologies. A few examples of semiconductor devices and a description of their theory of operational are then discussed, including transistors, semiconductor lasers, and photodetectors.

Autorentext

Manijeh Razeghi is a Walter P. Murphy Professor of Electrical and Computer Engineering and Director of the Center for Quantum Devices at Northwestern University. She joined the ECE department in 1991. Prior to that, she was the Head of the Exploratory Materials Lab, Thomson-CSF, Orsay, France, from 1986-1991. She has authored 1000 papers, given more than 500 invited and plenary talks, written 12 book chapters, 8 books, and holds 50 patents. Dr. Razeghi is a Fellow of the International Engineering Consortium, a Life Member and Fellow of the Society of Women Engineers, and a Fellow of the Society of Photo-Optical Instrumentation Engineering, the Optical Society of America (OSA), and of the IEEE. She won the IBM Europe Science and Technology Prize, an Achievement Award from the Society of Women Engineers, and many Best Paper Awards. Manijeh Razeghi received her DEA in 1976, the Docteur 3eme Cycle in Solid State Physics in 1977, and the Docteur d'Etat des Sciences Physiques in 1980, all from the Universite de Paris Sud (11), France.

Inhalt

Preface. List of Symbols. 1: Crystalline Properties of Solids. 1.1. Introduction. 1.2. Crystal lattices and the seven crystal systems. 1.3. The unit cell concept. 1.4. Bravais lattices. 1.5. Point groups. 1.6. Space groups. 1.7. Directions and planes in crystals: Miller indices. 1.8. Real crystal structures. 1.9. Summary. Further reading. Problems. 2: Electronic Structure of Atoms. 2.1. Introduction. 2.2. Spectroscopic emission lines and atomic structure of hydrogen. 2.3. Atomic orbitals. 2.4. Structures of atoms with many electrons. 2.5. Bonds in solids. 2.6. Introduction to energy bands. 2.7. Summary. Further reading. Problems. 3: Introduction to Quantum Mechanics. 3.1. The quantum concepts. 3.2. Elements of quantum mechanics. 3.3. Simple quantum mechanical systems. 3.4. Reciprocal lattice. 3.5. Summary. Further reading. Problems. 4: Electrons and Energy Band Structures in Crystals. 4.1. Introduction. 4.2. Electrons in a crystal. 4.3. Band structures in real semiconductors. 4.4. Band structures in metals. 4.5. Summary. References. Further reading. Problems. 5: Low Dimensional Quantum Structures. 5.1. Introduction. 5.2. Density of states (3D). 5.3. Two-dimensional structures: quantum wells. 5.4. One-dimensional structures: quantum wires. 5.5. Zero-dimensional structures: quantum dots. 5.6. Optical properties of 3D and 2D structures. 5.7. Examples of low dimensional structures. 5.8. Summary. References. Further reading. Problems. 6: Phonons. 6.1. Introduction. 6.2. Interaction of atoms in crystals: origin and formalism. 6.3. One-dimensional monoatomic harmonic crystal. 6.4. Sound velocity. 6.5. One-dimensional diatomic harmonic crystal. 6.6. Phonons. 6.7. Summary. Further reading. Problems. 7: Thermal Properties of Crystals. 7.1. Introduction. 7.2. Phonon density of states (Debye model). 7.3. Heat capacity. 7.4. Thermal expansion. 7.5. Thermal conductivity. 7.6. Summary. References. Further reading. Problems. 8: Equilibrium Charge Carrier Statistics in Semiconductors. 8.1. Introduction. 8.2. Density of states. 8.3. Effective density of states (conduction band). 8.4. Effective density of states (valence band). 8.5. Mass action law. 8.6. Doping: intrinsic vs. extrinsic semiconductor. 8.7. Charge neutrality. 8.8. Fermi energy as a function of temperature. 8.9. Carrier concentration in a semiconductor. 8.10. Summary. Further reading. Problems. 9: Non-Equilibrium Electrical Properties of Semiconductors. 9.1. Introduction. 9.2. Electrical conductivity. 9.3. Hall effect. 9.4. Charge carrier diffusion. 9.5. Quasi-Fermi energy. 9.6. Carrier generation and recombination mechanisms. 9.7. Summary. Further reading. Problems. 10: Semiconductor Junctions. 10.1. Introduction. 10.2. Ideal p-n junction at equilibrium. 10.3. Non-equilibrium properties of p-n jun