Presents state-of-the-art research on III-Nitrides material-based LED technology

Describes the full scope of III-Nitrides material-based LEDs, from basic concepts to materials growth and applications

Written by an experienced researcher in the field of semiconductor optoelectronic devices

Discusses the outlook for LED applications beyond illumination

Autorentext

Jinmin Li is a professor at the Institute of Semiconductors (IOS), Chinese Academy of Sciences (CAS). He received his bachelor's degree from Xi'an Jiaotong University in 1982 and Ph.D. from Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences in 1991. He became a professor at IOS, CAS in 1995 and was the director there from 2003-2012. He has been the director of the Solid State Lighting R&D Center of the Chinese Academy of Sciences since 2006 and director of the State Key Laboratory for Solid State Lighting since 2012. He has published more than 300 articles in peer-reviewed journals and proceedings.

Klappentext

The book provides an overview of III-nitride-material-based light-emitting diode (LED) technology, from the basic material physics to the latest advances in the field, such as homoepitaxy and heteroepitaxy of the materials on different substrates. It also includes the latest advances in the field, such as approaches to improve quantum efficiency and reliability as well as novel structured LEDs. It explores the concept of material growth, chip structure, packaging, reliability and application of LEDs. With spectra coverage from ultraviolet (UV) to entire visible light wavelength, the III-nitride-material-based LEDs have a broad application potential, and are not just limited to illumination. These novel applications, such as health & medical, visible light communications, fishery and horticulture, are also discussed in the book.

Inhalt

Introduction.- Basic concept of light-emitting diodes.- Property and testing analysis of III-nitrides based light-emitting diodes.- Epitaxy growth of III-nitrides based light-emitting diodes.- Green and blue light-emitting diodes based on InGaN/GaN MQWs structure.- UV light-emitting diodes based on AlGaN MQWs structure.- Quantum efficiency promotion of III-nitrides based light-emitting diodes.- Chip process of III-nitrides based light-emitting diodes.- Packaging of III-nitrides based light-emitting diodes.- Reliability analysis of III-nitrides based light-emitting diodes.- Application of light-emitting diodes.- Novel technology of III-nitrides based light-emitting diodes.