This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.

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Introduction References Semiclassical Transport Theory The Boltzmann Transport Equation . Balance Equations . The Microscopic Relaxation Time . Fluctuations in the Steady-State . References The Monte-Carlo Method Basic Monte-Carlo Methods . The Monte-Carlo Solver of the Boltzmann Equation . Velocity Autocorrelation Function . Basic Statistics . Convergence Estimation . References Scattering Mechanisms Phonon Scattering . Alloy Scattering . Impurity Scattering . Impact Ionization by Electrons . Surface Roughness Scattering . References Full-Band Structure Basic Properties of the Band Structure of Relaxed Silicon . Basic Properties of the Band Structure of Strained SiGe . k-Space Grid . Calculation of the Density of States . Mass Tensor Evaluation . Particle Motion in Phase-Space . Selection of a Final State in k-Space . References Device Simulation Device Discretization . Band Edges . Poisson Equation . Self-Consistent Device Simulation . Nonlinear Poisson Equation . Nonself-Consistent Device Simulation . Statistical Enhancement . Terminal Current Estimation . Contact Resistance . Normalization of Physical Quantities . References Momentum-Based Transport Models The Hydrodynamic Model . Small-Signal Analysis . Noise Analysis . The Drift-Diffusion Model . Transport and Noise Parameter Simulation . References Stochastic Properties of Monte-Carlo Device Simulations Stochastic Error . In-Advance CPU Time Estimation . References Results N+ NN+ and P+ PP+ Structures . MOSFETs . SiGe HBTs Subject Index