Atomic Layer Deposition (ALD) was originally designed for depositing uniform passivation layers over a very large area for display devices in the late 1970s. Only recently, in the 21st century, has the this technique become popular for high integrated semiconductor memory devices. This book discusses ALD for all modern semiconductor devices, the basic chemistry of ALD, and models of ALD processes. The book also details ALD for both mass produced memories and emerging memories. Each chapter of the book provides history, operating principles, and a full explanation of ALD processes for each device.

Autorentext

Cheol Seong Hwang received M.S. and Ph.D. degrees from Seoul National University, Seoul, Korea, in 1989 and 1993, respectively. In 1993, he joined the Material Science and Engineering Laboratory at the National Institutes of Standards and Technology, Gaithersburg, MD, as a Postdoctoral Research Fellow. He then joined Samsung Electronics Company, Ltd., as a Senior Researcher in 1994. In 1998, Dr. Hwang became a professor in the department of material science and engineering at Seoul National University. He has authored or coauthored more than 380 papers in international peer-reviewed scientific journals, which have been cited more than 7,500 times.Dr. Hwang was a recipient of the Alexander von Humboldt Fellowship Award, the 7th Presidential Young Scientist Award of the Korean government, and Faculty Excellent Award of Air Products, USA.

Zusammenfassung
This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines. The section on ALD for memories covers both mass-produced memories, such as DRAM and Flash, and emerging memories, such as PCRAM and FeRAM. The section on ALD for logic devices covers both front-end of the line processes and back-end of the line processes. The final section on ALD for machines looks at toolsets and systems hardware. Each chapter provides the history, operating principles, and a full explanation of ALD processes for each device.

Inhalt
Introduction.- Precursors and reaction mechanisms.- ALD simulations.- ALD for mass-production memories (DRAM and Flash).- ALD for emerging memories.- PcRAM.- FeRAM.- Front end of the line process.- Back end of the line.- ALD machines.