Silicon-Based Millimeter-Wave Devices

Silicon-Based Millimeter-Wave Devices describes field-theoretical methods for the design and analysis of planar waveguide structures and antennas. The principles and limitations of transit-time devices with different injection mechanisms are discussed, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter. Two chapters cover the silicon/germanium devices: physics and RF properties of the heterobipolar transistor and quantum effect devices such as the resonant tunneling element are described. The integration of devices in monolithic circuits is explained and advanced technologies are presented along with the self-mixing oscillator operation. Finally sensor and system applications are considered.

Texte du rabat

Silicon-Based Millimeter-Wave Devices describes field-theoretical methods for the design and analysis of planar waveguide structures and antennas. The principles and limitations of transit-time devices with different injection mechanisms are discussed, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter. Two chapters cover the silicon/germanium devices: physics and RF properties of the heterobipolar transistor and quantum effect devices such as the resonant tunneling element are described. The integration of devices in monolithic circuits is explained and advanced technologies are presented along with the self-mixing oscillator operation. Finally sensor and system applications are considered.

Contenu

1. Fundamentals.- 1.1 Silicon as the Base Material for MMICs.- 1.2 Linear Passive Planar Millimeter Wave Circuits on Silicon.- 1.3 Planar Millimeter-Wave Antennas on Silicon.- 1.4 Planar Millimeter-Wave Circuits Containing Active and Nonlinear Elements.- 1.5 Appendix: Closed-Form Expressions for Transmission-Line Characteristics.- References.- 2. Transit-Time Devices.- 2.1 Principles of Transit-Time-Induced Negative Resistance.- 2.2 Injection Mechanisms.- 2.3 Numerical Large-Signal Simulations.- 2.4 Skin Effect.- 2.5 Thermal Properties.- 2.6 Design Constraints.- 2.7 Technology.- 2.8 Performance.- 2.9 New Transit-Time Device Concepts.- References.- 3. Schottky Contacts on Silicon.- 3.1 Schottky-Barrier Models.- 3.2 Epitaxial Diodes on Si.- 3.3 Electrical Transport Properties.- 3.4 Schottky-Barrier Measurements.- 3.5 Conclusions.- References.- 4. SiGe Heterojunction Bipolar Transistors.- 4.1 Operation Principle of Homojunction and Heterojunction Bipolar Transistors.- 4.2 Design of SiGe HBT Layers.- 4.3 Fabrication Technologies and Device Performance.- 4.4 Applications of SiGe HBTs.- 4.5 Conclusion.- References.- 5. Silicon Millimeter-Wave Integrated Circuits.- 5.1 Silicon as the Substrate Material.- 5.2 Millimeter-Wave Sources for SIMMWICs.- 5.3 SIMMWIC Transmitter.- 5.4 SIMMWIC Receiver.- 5.5 SIMMWIC Switch.- References.- 6. Self-Mixing Oscillators.- 6.1 Principle of Operation.- 6.2 Linear Disturbance Theory.- 6.3 Matrix Formulation of Conversion Gain.- 6.4 Noise in Self-Mixing Oscillators.- 6.5 Numerical Simulations.- 6.6 Measuring Techniques and Experimental Results.- References.- 7. Silicon Millimeter-Wave Integrated Circuit Technology.- 7.1 Technological Requirements for a Millimeter-Wave Substrate.- 7.2 Basic Technologies.- 7.3 Fabrication Process and Monolithic Integration of Two-Terminal Devices.- 7.4 Fabrication Process of Three-Terminal Devices.- 7.5 Summary and Prospects.- References.- 8. Future Devices.- 8.1 Physics and Applications of Si/SiGe, Double-Barrier Structures.- 8.2 The Si/SiGe Quantum Barrier Varactor Diode.- 8.3 Field-Effect Devices: Si/SiGe MODFET and MOST, ?-Doped Si FET.- Appendix 8.A The Effective-Mass Approximation.- Appendix 8.B Maximum Oscillation Frequency and Power Generation.- References.- 9. Future Applications.- 9.1 Sensor Applications.- 9.2 Communication Applications.- 9.3 System Requirements.- References.