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5G and E-Band Communication Circuits in Deep-Scaled CMOS

  • Couverture cartonnée
  • 216 Nombre de pages
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This book discusses design techniques, layout details and measurements of several key analog building blocks that currently limit the performance of 5G and E-Band transceivers implemented in deep-scaled CMOS. The authors present recent developments in low-noise quadrature VCOs and tunable inductor-less frequency dividers. Moreover, the design of low-loss broadband transformer-based filters that realize inter-stage matching, power division/combining and impedance transformation is discussed in great detail. The design and measurements of a low-noise amplifier, a downconverter and a highly-linear power amplifier that leverage the proposed techniques are shown. All the prototypes were realized in advanced nanometer scaled CMOS technologies without RF thick to metal option.


Marco Vigilante (S'14-M'17) was born in Carpi, Italy, in 1988. He received the B.S. and M.S. degrees in electrical engineering from Università di Modena, Modena, Italy, in 2010 and 2012, and the Ph.D. degree from the University of Leuven (KU Leuven), Leuven, Belgium, in 2017. He is currently working as a research assistant at the MICAS laboratories of the KU Leuven in the field of high performance analog building blocks for mm-Wave transceivers designed in deep-scaled CMOS. Mr. Vigilante was the recipient of the IEEE Solid-State Circuits Society Predoctoral Achievement Award for 2016-2017 and the 2017 IEEE RFIC Symposium Best Student Paper Award-3rd Place.

Patrick Reynaert was born in Wilrijk, Belgium, in 1976. He received the Master of Industrial Sciences in Electronics (ing.) from the Karel de Grote Hogeschool, Antwerpen, Belgium in 1998 and both the Master of Electrical Engineering (ir.) and the Ph.D. in Engineering Science (dr.) from the Katholieke Universiteit Leuven (K.U.Leuven), Belgium in 2001 and 2006 respectively. From 2001 to 2006, he was a Teaching and Research Assistant within the MICAS research group of the Department of Electrical Engineering (ESAT), K.U.Leuven, Belgium. While working towards his Ph.D. degree, his main research focus was on CMOS RF power amplifiers and analog circuit design for mobile and wireless communications. From 2001 to 2006, he was also a Lector at ACE-Group T Leuven, Belgium where he taught several undergraduate courses on electronic circuit design. During 2006-2007, he was a post-doctoral researcher at the Department of Electrical Engineering and Computer Sciences of the University of California at Berkeley. At the Berkeley Wireless Research Center, he was working on mm-wave CMOS integrated circuits within the group of Prof. Ali Niknejad. For this research, he received a Francqui Foundation fellowship from the Belgian American Educational Foundation. During the summer of 2007, he was a visiting researcher at Infineon, Villach, Austria where he worked on the linearization of basestation power amplifiers. Since October 2007, he is a Professor at KU Leuven, department of Electrical Engineering (ESAT) and a staff member of the ESAT-MICAS research group. His main research interests include mm-wave and sub-THz CMOS circuit design and RF power amplifiers. Patrick Reynaert is a Senior Member of the IEEE and chair of the IEEE SSCS Benelux Chapter. He serves or has served on the technical program committees of several international conferences including the ISSCC-SRP, IEDM, ESSCIRC, RFIC and PRIME. He has served as Associate Editor for TCAS-I and as Guest Editor for JSSC. In 2011, he received the TSMC-Europractice Innovation Award. He is co-recipient of the ESSCIRC-2011 Best Paper Award. In 2014, he received the 2nd prize of the Bell Labs Prize.


Introduction.- Gm Stage and Passives in deep-scaled CMOS.- Gain-Bandwidth Enhancement Techniques for mm-Wave fully integrated Amplifiers.- mm-Wave LC VCOs.- mm-Wave Dividers.- mm-Wave Broadband Downconverters.- mm-Wave Highly-Linear Broadband Power Amplifiers.- Conclusion.

Informations sur le produit

Titre: 5G and E-Band Communication Circuits in Deep-Scaled CMOS
Code EAN: 9783319891927
ISBN: 3319891928
Format: Couverture cartonnée
Editeur: Springer International Publishing
Genre: Electrotechnique
nombre de pages: 216
Poids: 335g
Taille: H235mm x B155mm x T11mm
Année: 2019
Auflage: Softcover reprint of the original 1st ed. 2018

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