Auteur Professor Chinmay K. Maiti, PhD is an Ex-Professor and Ex-Head of Department from Indian Institute of Technology (IIT) Khar...
Habituellement expédié sous 2 à 4 semaines.
Professor Chinmay K. Maiti, PhD is an Ex-Professor and Ex-Head of Department from Indian Institute of Technology (IIT) Kharagpur, India. He then joined the SOA University, Bhubaneswar in May 2015 as a Professor, where he is now on a Visiting Assignment. He is interested in strain-engineering in nanodevices, flexible electronics, and semiconductor device/process simulation research, and microelectronics education. He has published several monographs in Silicon-Germanium, heterostructure-Silicon, and Technology CAD areas. He has edited the "Selected Works of Professor Herbert Kroemer", World Scientific, Singapore, 2008.
Résumé Based on 3D process and device simulations with mechanical stress simulations by finite element techniques, this book explains performance assessment of nanoscale devices with strained SiGe and other stressors. It explains the process-induced stress transfer and developments at 7nm technology and below node in the area of strain-engineered devices.
Chapter 1. Introduction
Chapter 2. Simulation Environment
Chapter 3. Stress Generation Techniques in CMOS Technology
Chapter 4. Electronic Properties of Engineered Substrates
Chapter 5. Bulk-Si FinFETs
Chapter 6. Strain-Engineered FinFETs at NanoScale
Chapter 7. Technology CAD of III-Nitride Based Devices
Chapter 8. Strain-Engineered SiGe Channel TFT for Flexible Electronics
Informations sur le produit
Stress and Strain Engineering at Nanoscale in Semiconductor Devices