Electrical Characterization of Silicon-on-Insulator Materials and Devices

Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.

Inhalt
Preface.- 1 Introduction.- 1.1 Why SOI ?.- 1.2 Why Not Yet SOI ?.- 1.3 Why an SOI Book?.- 2 Methods of Forming SOI Wafers.- 2.1 SIMOX.- 2.2 Wafer Bonding.- 2.3 Zone-Melting Recrystallization.- 2.4 Epitaxial Lateral Overgrowth.- 2.5 Full Isolation by Porous Oxidized Silicon.- 2.6 Silicon on Sapphire.- 2.7 Silicon on Zirconia.- 3 SOI Devices.- 3.1 Advanced CMOS and Bipolar Devices.- 3.2 Radiation-Hardened Circuits.- 3.3 High-Voltage Devices.- 3.4 High-Temperature Devices.- 3.5 Low-Power Applications.- 3.6 Three-Dimensional Devices.- 3.7 Transducers.- 3.8 Innovative Devices.- 4 Wafer-Screening Techniques.- 4.1 The Basis for Wafer Screening.- 4.2 Surface Photovoltage.- 4.3 Dual-Beam S-Polarized Reflectance.- 4.4 Dual-Beam Optical Modulation.- 4.5 Other Optical Methods.- 4.6 Point Contact Pseudo-MOS Transistor.- 4.7 Quick-Turnaround Capacitance.- 4.8 Pinhole Detection.- 4.9 Conclusion.- 5 Transport Measurements.- 5.1 Four-Point Probe.- 5.2 Spreading Resistance.- 5.3 Hall Effect and Magnetoresistance.- 5.4 Van der Pauw Measurements.- 5.5 Photoconductivity.- 5.6 PICTS.- 6 SIS Capacitor-Based Characterization Techniques.- 6.1 Capacitance and Conductance Techniques.- 6.2 Bias-Scan DLTS Technique.- 6.4 Zerbst Method and Generation Lifetime.- 6.5 MOS Capacitance Method.- 7 Diode Measurements.- 7.1 CurrentVoltage Measurements in a PN Diode.- 7.2 Differential Current/Capacitance Method.- 7.3 Gated-Diode Measurements.- 7.4 Deep-Level Transient Spectroscopy.- 8 Electrical Characterization of SOI Materials and Devices MOS Transistor Characteristics.- 9 Transistor-Based Characterization Techniques.- List of Symbols.