New Developments in Semiconductor Physics

This volume contains selected papers presented at the summer school on semiconductor physics in Szeged (Hungary). They cover the areas of multilayer growth technology, theory of electron states, transport theory, defect related effects and structural properties of semiconductors. The book addresses physicists as well as engineers.

Inhalt
Integer quantum hall effect.- Theory of the energy loss rate of hot electrons in 2D systems.- The transport problem.- Cyclotron resonance of quasi-two-dimensional polarons.- On the concentration dependence of the thermal activation energy of impurities in semicondectors.- The use of hydrostatic pressure and alloying to introduce deep levels in the forbidden gap of InSb and GaAS.- Electronic structure of complex defects in silicon.- Electron microscopy in semiconductor physics.- Determination of the lateral defect distribution by SDLTS in GaAs.- Formation of ribbon-like defects during low-temperature annealing of Czochralski-grown silicon.- Band-edge offsets in semiconductor heterojunctions.- Defect dynamics in crystalline and amorphous silicon.- On the diffusion of oxygen in a silicon crystal.- Hexagonal site interstitial related states in silicon.- The diffusion and electronic structure of hydrogen in silicon.- Spectroscopic studies of point defects in silicon and germanium.- Deep levels in Cz-Si due to heat treatment at 600...900 °C.- Interpretation of the electric field dependent thermal emission data of deep traps.- Electrochemical characterization of GaAs and its multilayer structure materials.- Positron study of defects in GaAs.- Deep level profiling technique in the semiconductor of MIS structure.- Transition metal impurities in silicon.- Electronic properties of pairs of shallow acceptors with iron or manganese in silicon.- MOCVD technology.- Epitaxial growth of PBTE doping superlattices on (111) BaF2 and (100) GaAs.- Energy distribution of interface states in GaAs-Cr/Au Schottky contacts obtained from IV characteristics.- Surface work function transients of tunnel SIO2-SI structures.