Thin Film Growth Techniques for Low-Dimensional Structures

This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.

Klappentext

This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.

Inhalt
Growth of Low-Dimensional Structures in Semiconductors.- Effect of Barrier Configurations and Interface Quality on structural and Optical Properties of MBE-Grown AlxGa1-xAs/GaAs, AlxGa1-xSb/GaSb and AlxIn1-xAs/GaxIn1-xAs Superlattices.- Dynamic RHEED Techniques and Interface Quality in MBE-Grown GaAs/(Al,Ga)As Structures.- Molecular Beam Epitaxial Growth Kinetics, Mechanism(s) and Interface Formation: Computer Simulations and Experiments.- Diffraction Studies of Epitaxy: Elastic, Inelastic and Dynamic Contributions to RHEED.- Some Aspects of RHEED Theory.- Superlattices and Superstructures Grown by MOCVD.- Growth of Indium Phosphide/Indium Gallium Arsenide Structures by MOCVD Using an Atmospheric Pressure Reactor.- MOCVD Growth of Narrow Gap Low Dimensional Structures.- The Preparation of Modulated Semiconductor Structures by Liquid Phase Epitaxy.- Growth and Structure of Compositionally Modulated Amorphous Semiconductor Superlattices and Heterojunctions.- Atomic Layer Epitaxy of Compound Semiconductors.- Reflection High-Energy Electron Diffraction Intensity Oscillations An Effective Tool of Si and GexSi1-x Molecular Beam Epitaxy.- RHEED Intensity Oscillations and the Epitaxial Growth of Quasi-2D Magnetic Semiconductors.- Growth of Low-Dimensional Metallic Structures.- Magnetic Interface Preparation and Analysis.- Increased Magnetic Moments in Transition Elements Through Epitaxy.- Growth and Characterization of Magnetic Transition Metal Overlayers On GaAs Substrates.- Metal Semiconductor Interfaces: The Role of Structure and Chemistry.- Synthesis of Rare Earth Films and Superlattices.- Ferromagnetic Metallic Multilayers: From Elementary Sandwiches to Superlattices.- The Characterization of Modulated Metallic Structures by X-Ray Diffraction.- Spin-Polarized NeutronReflection from Metastable Magnetic Films.- Characterization of Low-Dimensional Structures.- Probing Semiconductor MQW Structures by X-Ray Diffraction.- Characterization of Superlattices by X-Ray Diffraction.- High Resolution Electron Microscopy and Convergent Beam Electron Diffraction of Semiconductor Quantum Well Structures.- The TEM Characterization of Low-Dimensional Structures in Epitaxial Semiconductor Thin Films.- Magneto-Optic Kerr Effect and Lightscattering from Spinwaves: Probes of Layered Magnetic Structures.- Magnetism, at Surfaces and Spin Polarized Electron Spectroscopy.- Epitaxial Growths and Surface Science Techniques Applied to the Case of Ni Overlayers on Single Crystal Fe (001).