Analysis and Characterization of GaAs MOSFET with High-K Dielectric Material

Scientific Essay from the year 2015 in the subject Engineering - Communication Technology, , course: VLSI Technology, language: English, abstract: Analysis and characterization of the GaAs MOSFET with High-k gate dielectric material and also do the small signal analysis and noise analysis using TCAD tool. In present research work GaAs is employed as substrate material. Band gap of GaAs is about 1.43eV. Lattice constant for GaAS is 5.65A. Substrate doping is 1x10^16 cm-3. HFO2 gate dielectric deposited on GaAs(100) substrate. HFO2 film is 20nm thick. Dielectric constant of HFO2 is order of 20-25. Permittivity (F cm^-2) is 20EUR0. Band gap (eV) is 4.5-6.0.HFO2 grown by Atomic Layer Deposition on GaAs. The transition metal Au is proposed dopant for GaAs. Source/Drain junction depth is 20nm. Doping levels of drain source are 1e20. Gold is used for gate metal. A working GaAs device is simulated and out performs the Si core device due to its increased mobility. It also decreases leakage current. Solve the problem of Fermi level pinning. So GaAs MOSFET is always better than Si MOSFET.

Autorentext

Dr. Krupal Prabhakar Pawar is working as an Assistant Professor in Department of Mechanical Engineering ,Sandip University,Nashik. He is completed his Ph.D. from Shri Satya Sai University of Technology and Medical Sciences, Sehore, Madhya Pradesh (M.P) in 2019.He has completed Master of Engineering (ME) in Mechanical Engineering (Advance Manufacturing and Mechanical Systems Design) from Shri Gajanan Maharaj College of Engineering, Shegaon, Dist.-Buldhana in 2015.He has completed Bachelor of Engineering (BE) from R.C.Patel Institute of Technology, Shirpur, Dist.-Dhule in 2010. He has two years manufacturing industry experience.He has published a number of papers in national and international journals.He is a member of various professional societies.