Dilute III-V Nitride Semiconductors and Material Systems

A major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few percentages of nitrogen into III-V semiconductor lattice leads to a dramatic reduction of the band gap. This discovery has opened the possibility of using these material systems for applications ranging from lasers to solar cells. Physics and Technology of Dilute III-V Nitride Semiconductors & Novel Dilute Nitride Material Systems reviews the current status of research and development in dilute III-V nitrides, with 24 chapters from prominent research groups covering recent progress in growth techniques, experimental characterization of band structure, defects carrier transport, transport properties, dynamic behavior of N atoms, device applications, modeling of device design, novel optoelectronic integrated circuits, and novel nitrogen containing III-V materials.

Autorentext

Ayse Erol obtained her Ph.D. degree in 2002 from the Physics Department of the Istanbul University in Turkey. During her PhD studies, she joined to Prof. Naci Balkan's group for researches on Dilute Nitride Semiconductors as a Research Fellow in 2001. From 1998 to 2004 she was employed as Research Assistant at Istanbul University and in 2004 she promoted to Assistant Professor Position. Main research areas include semiconductor optoelectronics, vertical cavity surface emitting lasers, and optical characterization of low dimensional semiconductor devices such as GaAs/GaAlAs and GaInNAs/GaAs quantum wells. She has published several research papers and she is co-author a popular science book and co-editor of a conference proceeding journal. She is currently an Assistant Professor in Solid State Division, Physics Department, at the Istanbul University and continues her researches at Nano- and Optoelectronics Materials and Devices Research Laboratory.

Inhalt
Energetic Beam Synthesis of Dilute Nitrides and Related Alloys.- Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (100) and (111)B Quantum Wells.- Electronic Band Structure of Highly Mismatched Semiconductor Alloys.- Electronic Structure of GaNxAs1?x Under Pressure.- Experimental Studies of GaInNAs Conduction Band Structure.- Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and the Electron Effective Mass Issues.- The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides.- Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells.- Assessing the Preferential Chemical Bonding of Nitrogen in Novel Dilute IIIAsN Alloys.- The Hall Mobility in Dilute Nitrides.- Spin Dynamics in Dilute Nitride.- Optical and Electronic Properties of GaInNP Alloys: A New Material for Lattice Matching to GaAs.- Properties and Laser Applications of the GaP-Based (GaNAsP)-Material System for Integration to Si Substrates.- Comparison of the Electronic Band Formation and Band Structure of GaNAs and GaNP.- Doping, Electrical Properties and Solar Cell Application of GaInNAs.- Elemental Devices and Circuits for Monolithic Optoelectronic-Integrated Circuit Fabricated in Dislocation-Free Si/IIIV-N Alloy Layers Grown on Si Substrate.- Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers.- Dilute Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition.- Interdiffused GaInNAsSb Quantum Well on GaAs for 1,3001,550 nm Diode Lasers.- Vertical Cavity Semiconductor Optical Amplifiers Based on Dilute Nitrides.- Dilute Nitride Photodetector and Modulator Devices.